Invention Grant
- Patent Title: Preventing shorting dendritic migration between electrodes
- Patent Title (中): 防止电极之间短路枝晶迁移
-
Application No.: US14027370Application Date: 2013-09-16
-
Publication No.: US09018765B2Publication Date: 2015-04-28
- Inventor: John C. Pritiskutch , Richard R. Hildenbrandt
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Coppell
- Agency: Gardere Wynne Sewell LLP
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L23/00

Abstract:
In a general aspect, an integrated circuit package includes a first electrode and a second electrode on a support substrate. The first electrode and the second electrode are configured to be electrically coupled to a voltage differential. A dendritic migration of a migratory species can develop under the voltage differential and a non-hermetic environment. The dendritic migration is interrupted by a floating electrical barrier mounted onto the support substrate between the first electrode and the second electrode. The electrical barrier includes a dam for preventing the metal migration. The dam has a height approximately equal to or greater than the largest dimension of a single atom of the migratory species. The first electrode and the second electrode can be mounted on the same side of the support substrate, or on two opposite sides of the support substrate.
Public/Granted literature
- US20140138834A1 PREVENTING SHORTING DENDRITIC MIGRATION BETWEEN ELECTRODES Public/Granted day:2014-05-22
Information query
IPC分类: