公开(公告)号：US20140138834A1

公开(公告)日：2014-05-22

申请号：US14027370

申请日：2013-09-16

Applicant: STMICROELECTRONICS, INC.

Inventor： John C. Pritiskutch ,  Richard R. Hildenbrandt

IPC: H01L23/532

CPC classification number: H01L29/41716 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a general aspect, an integrated circuit package includes a first electrode and a second electrode on a support substrate. The first electrode and the second electrode are configured to be electrically coupled to a voltage differential. A dendritic migration of a migratory species can develop under the voltage differential and a non-hermetic environment. The dendritic migration is interrupted by a floating electrical barrier mounted onto the support substrate between the first electrode and the second electrode. The electrical barrier includes a dam for preventing the metal migration. The dam has a height approximately equal to or greater than the largest dimension of a single atom of the migratory species. The first electrode and the second electrode can be mounted on the same side of the support substrate, or on two opposite sides of the support substrate.

Abstract translation: 在一般方面，集成电路封装包括第一电极和支撑衬底上的第二电极。 第一电极和第二电极被配置为电耦合到电压差。 迁移物种的树突状迁移可以在电压差和非密封环境下发展。 树枝状迁移被安装在第一电极和第二电极之间的支撑基板上的浮动电屏障中断。 电气屏障包括防止金属迁移的大坝。 大坝的高度大约等于或大于迁移物种单个原子的最大尺寸。 第一电极和第二电极可以安装在支撑基板的相同侧上，或者安装在支撑基板的两个相对侧上。

公开(公告)号：US09018765B2

公开(公告)日：2015-04-28

申请号：US14027370

申请日：2013-09-16

Applicant: STMicroelectronics, Inc.

Inventor： John C. Pritiskutch ,  Richard R. Hildenbrandt

IPC: H01L29/417 ,  H01L23/00

CPC classification number: H01L29/41716 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a general aspect, an integrated circuit package includes a first electrode and a second electrode on a support substrate. The first electrode and the second electrode are configured to be electrically coupled to a voltage differential. A dendritic migration of a migratory species can develop under the voltage differential and a non-hermetic environment. The dendritic migration is interrupted by a floating electrical barrier mounted onto the support substrate between the first electrode and the second electrode. The electrical barrier includes a dam for preventing the metal migration. The dam has a height approximately equal to or greater than the largest dimension of a single atom of the migratory species. The first electrode and the second electrode can be mounted on the same side of the support substrate, or on two opposite sides of the support substrate.

Abstract translation: 在一般方面，集成电路封装包括在支撑衬底上的第一电极和第二电极。 第一电极和第二电极被配置为电耦合到电压差。 迁移物种的树突状迁移可以在电压差和非密封环境下发展。 枝晶迁移被安装在第一电极和第二电极之间的支撑衬底上的浮动电屏障中断。 电气屏障包括防止金属迁移的大坝。 大坝的高度大约等于或大于迁移物种单个原子的最大尺寸。 第一电极和第二电极可以安装在支撑基板的相同侧上，或者安装在支撑基板的两个相对侧上。