Invention Grant
- Patent Title: Capacitance trimming with an integrated heater
- Patent Title (中): 电容调整与集成加热器
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Application No.: US13310466Application Date: 2011-12-02
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Publication No.: US09019688B2Publication Date: 2015-04-28
- Inventor: Olivier Le Neel , Ravi Shankar
- Applicant: Olivier Le Neel , Ravi Shankar
- Applicant Address: SG Singapore
- Assignee: STMicroelectronics Pte Ltd.
- Current Assignee: STMicroelectronics Pte Ltd.
- Current Assignee Address: SG Singapore
- Agency: Seed IP Law Group PLLC
- Main IPC: H01G7/04
- IPC: H01G7/04 ; H01L23/522 ; H01L49/02 ; H01L23/34 ; H01G4/33 ; H01L27/06

Abstract:
The present disclosure is directed to a device and a method for achieving a precise capacitance of a capacitor. The method includes trimming a first capacitance of the capacitor to a second capacitance, the capacitor having a first conductive layer separated from a second conductive layer by a dielectric layer. Changing a first dielectric constant of the dielectric layer to a second dielectric constant, where the first dielectric constant corresponding to the first capacitance and the second dielectric constant corresponding to the second dielectric constant includes heating the dielectric layer above a threshold temperature for a time period. The heat is provided by either one of the plates of the capacitor or from a separate heater.
Public/Granted literature
- US20130141834A1 CAPACITANCE TRIMMING WITH AN INTEGRATED HEATER Public/Granted day:2013-06-06
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