公开(公告)号：US09448198B2

公开(公告)日：2016-09-20

申请号：US13176599

申请日：2011-07-05

申请人： Olivier Le Neel ,  Suman Cherian ,  Ravi Shankar

发明人： Olivier Le Neel ,  Suman Cherian ,  Ravi Shankar

IPC分类号： G01K1/00 ,  G01K13/00 ,  G01K17/00 ,  G01N25/00 ,  G01N27/327 ,  G01N33/49

CPC分类号： G01N27/3272 ,  G01N33/49

摘要： Microsensors that include an integrated thermal energy source and an integrated temperature sensor are capable of providing localized heating and temperature control of individual sensing regions within the microsensor. Localized temperature control allows analyte detection to be carried out at the same temperatures or substantially the same temperatures at which the sensor is calibrated. By carrying out the sensing near the calibration temperature, more accurate results can be obtained. In addition, the temperature of the sensing region can be controlled so that chemical reactions involving the analyte in the sensing region occur near their peak reaction rate. Carrying out the sensing near the peak reaction rate improves the sensitivity of the sensor which is important as sensor dimensions decrease and the magnitude of the generated signals decreases.

摘要翻译： 包括集成热能源和集成温度传感器的微型传感器能够提供微传感器内各个感测区域的局部加热和温度控制。 局部温度控制允许分析物检测在相同的温度或基本相同的温度下进行，在此温度下传感器被校准。 通过在校准温度附近进行感测，可以获得更准确的结果。 此外，可以控制感测区域的温度，使得涉及感测区域中的分析物的化学反应在峰值反应速率附近发生。 在峰值反应速率附近进行感测提高了传感器的灵敏度，这在传感器尺寸减小并且产生的信号的幅度减小时是重要的。

公开(公告)号：US20120153358A1

公开(公告)日：2012-06-21

申请号：US12975194

申请日：2010-12-21

申请人： Ravi Shankar ,  Olivier Le Neel

发明人： Ravi Shankar ,  Olivier Le Neel

IPC分类号： H01L23/367 ,  H01L21/46

CPC分类号： H01L23/522 ,  H01L23/3677 ,  H01L2924/0002 ,  H01L2924/00

摘要： The thermal energy transfer techniques of the disclosed embodiments utilize passive thermal energy transfer techniques to reduce undesirable side effects of trapped thermal energy at the circuit level. The trapped thermal energy may be transferred through the circuit with thermally conductive structures or elements that may be produced as part of a standard integrated circuit process. The localized and passive removal of thermal energy achieved at the circuit level rather just at the package level is both more effective and more efficient.

摘要翻译： 所公开的实施例的热能传递技术利用无源热能传递技术来减少在电路级别被捕获的热能的不期望的副作用。 捕获的热能可以通过具有导热结构或可以作为标准集成电路工艺的一部分产生的元件的电路传输。 在电路级别实现的热能的局部和被动去除，而不仅仅是在封装级别更有效和更有效。

公开(公告)号：US20110156712A1

公开(公告)日：2011-06-30

申请号：US12650257

申请日：2009-12-30

申请人： Ravi Shankar ,  Olivier Le Neel

发明人： Ravi Shankar ,  Olivier Le Neel

IPC分类号： G01R31/327 ,  G01R33/12

CPC分类号： G01R1/07378 ,  G01R1/07342 ,  G01R31/31702 ,  G01R31/318511 ,  G01R31/3278

摘要： A testing mechanism for testing magnetically operated microelectromechanical system (MEMS) switches at a wafer level stage of manufacture includes an electromagnetic fixture configured to be received in a standard probe ring. The electromagnetic fixture is rotatable, relative to the probe ring, to permit adjustment of orientation of a generated magnetic field relative to the MEMS devices of a subject wafer. The testing mechanism also includes a probe card with probes positioned to contact test pads on the subject wafer. During operation, the probe card is positioned over the wafer to be tested, with the test probes in electrical contact with respective contact pads of the wafer, and the electromagnetic fixture is positioned above the probe card. An electrical potential is applied across the switches on the subject wafer, and the electromagnetic fixture is energized at selected levels of power and duration. Current flow across each switch is measured to determine one or more of: open circuit contact resistance, closed circuit contact resistance, response time, response to switching magnetic field, frequency response, current capacity, critical dimensions, critical angles of magnetic field orientation, etc. Wafer level testing enables rejection of non-compliant switches before the cutting and packaging levels of manufacture.

摘要翻译： 用于在晶片级制造阶段测试磁操作微机电系统（MEMS）开关的测试机构包括被配置为接收在标准探针环中的电磁夹具。 电磁夹具相对于探针环可旋转，以允许相对于目标晶片的MEMS器件调整产生的磁场的取向。 测试机构还包括具有探针的探针卡，所述探针被定位成接触主体晶片上的测试焊盘。 在操作期间，探针卡位于要测试的晶片上，测试探针与晶片的相应接触焊盘电接触，并且电磁夹具位于探针卡上方。 在主体晶片上的开关上施加电势，并且电磁夹具以选定的功率和持续时间被激励。 测量每个开关上的电流，以确定以下一个或多个：开路接触电阻，闭路接触电阻，响应时间，对开关磁场的响应，频率响应，电流容量，临界尺寸，磁场定向的临界角等 晶圆级测试在切割和封装制造水平之前能够拒绝不符合标准的开关。

公开(公告)号：US09027400B2

公开(公告)日：2015-05-12

申请号：US13310477

申请日：2011-12-02

申请人： Olivier Le Neel ,  Suman Cherian ,  Ravi Shankar ,  Boon Nam Poh ,  Sebastien Marsanne ,  Michele Vaiana

发明人： Olivier Le Neel ,  Suman Cherian ,  Ravi Shankar ,  Boon Nam Poh ,  Sebastien Marsanne ,  Michele Vaiana

IPC分类号： G01N27/22

CPC分类号： G01N27/223

摘要： A capacitive humidity sensor includes a first electrode, a humidity sensitive dielectric layer, and a second electrode. The humidity sensitive dielectric layer is between the first and the second electrodes. The humidity sensitive dielectric layer is etched at selected regions to form hollow regions between the first and second electrodes.

摘要翻译： 电容式湿度传感器包括第一电极，湿度敏感介电层和第二电极。 湿敏电介质层位于第一和第二电极之间。 在选定的区域蚀刻湿度敏感的介电层，以在第一和第二电极之间形成中空区域。

公开(公告)号：US08809861B2

公开(公告)日：2014-08-19

申请号：US12981375

申请日：2010-12-29

申请人： Olivier Le Neel ,  Ravi Shankar ,  Calvin Leung

发明人： Olivier Le Neel ,  Ravi Shankar ,  Calvin Leung

IPC分类号： H01L29/786 ,  H01L49/00

CPC分类号： H01L49/00 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78684 ,  Y10S257/902

摘要： A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device.

摘要翻译： 形成具有薄膜金属沟道区的晶体管。 晶体管可以形成在半导体衬底的表面，绝缘衬底或衬底之上的电介质层之间。 可以形成各自具有薄膜金属沟道区的多个晶体管。 这种晶体管的多个阵列可以垂直地堆叠在相同的器件中。

公开(公告)号：US20130139587A1

公开(公告)日：2013-06-06

申请号：US13310477

申请日：2011-12-02

申请人： Olivier Le Neel ,  Suman Cherian ,  Ravi Shankar ,  Boon Nam Poh ,  Sebastien Marsanne ,  Michele Vaiana

发明人： Olivier Le Neel ,  Suman Cherian ,  Ravi Shankar ,  Boon Nam Poh ,  Sebastien Marsanne ,  Michele Vaiana

IPC分类号： G01N27/22 ,  B05D3/10 ,  C23F1/02 ,  B05D5/12

CPC分类号： G01N27/223

摘要： A capacitive humidity sensor includes a first electrode, a humidity sensitive dielectric layer, and a second electrode. The humidity sensitive dielectric layer is between the first and the second electrodes. The humidity sensitive dielectric layer is etched at selected regions to form hollow regions between the first and second electrodes.

摘要翻译： 电容式湿度传感器包括第一电极，湿度敏感介电层和第二电极。 湿敏电介质层位于第一和第二电极之间。 在选定的区域蚀刻湿度敏感的介电层，以在第一和第二电极之间形成中空区域。

公开(公告)号：US20120168754A1

公开(公告)日：2012-07-05

申请号：US12981375

申请日：2010-12-29

申请人： Olivier Le Neel ,  Ravi Shankar ,  Calvin Leung

发明人： Olivier Le Neel ,  Ravi Shankar ,  Calvin Leung

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L49/00 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/78684 ,  Y10S257/902

摘要： A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device.

摘要翻译： 形成具有薄膜金属沟道区的晶体管。 晶体管可以形成在半导体衬底的表面，绝缘衬底或衬底之上的电介质层之间。 可以形成各自具有薄膜金属沟道区的多个晶体管。 这种晶体管的多个阵列可以垂直地堆叠在相同的器件中。

公开(公告)号：US09019688B2

公开(公告)日：2015-04-28

申请号：US13310466

申请日：2011-12-02

申请人： Olivier Le Neel ,  Ravi Shankar

发明人： Olivier Le Neel ,  Ravi Shankar

IPC分类号： H01G7/04 ,  H01L23/522 ,  H01L49/02 ,  H01L23/34 ,  H01G4/33 ,  H01L27/06

CPC分类号： H01G7/04 ,  H01G4/33 ,  H01L23/345 ,  H01L23/5223 ,  H01L23/5228 ,  H01L27/0688 ,  H01L28/40 ,  H01L28/55 ,  H01L2924/0002 ,  Y10T29/43 ,  H01L2924/00

摘要： The present disclosure is directed to a device and a method for achieving a precise capacitance of a capacitor. The method includes trimming a first capacitance of the capacitor to a second capacitance, the capacitor having a first conductive layer separated from a second conductive layer by a dielectric layer. Changing a first dielectric constant of the dielectric layer to a second dielectric constant, where the first dielectric constant corresponding to the first capacitance and the second dielectric constant corresponding to the second dielectric constant includes heating the dielectric layer above a threshold temperature for a time period. The heat is provided by either one of the plates of the capacitor or from a separate heater.

摘要翻译： 本公开涉及一种用于实现电容器的精确电容的装置和方法。 该方法包括将电容器的第一电容调整为第二电容，该电容器具有通过电介质层与第二导电层分离的第一导电层。 将电介质层的第一介电常数改变到第二介电常数，其中对应于第一电容的第一介电常数和对应于第二介电常数的第二介电常数包括将电介质层加热到阈值温度一段时间。 热量由电容器的任一个板或从单独的加热器提供。

公开(公告)号：US08581679B2

公开(公告)日：2013-11-12

申请号：US12713390

申请日：2010-02-26

申请人： Tang Min ,  Olivier Le Neel ,  Ravi Shankar

发明人： Tang Min ,  Olivier Le Neel ,  Ravi Shankar

IPC分类号： H01H51/22 ,  H01H57/00

CPC分类号： H01H1/0036

摘要： Switches that are actuated through exposure to a magnetic field are described. A mobile element of a switch includes one or more anchoring members that are in electrical contact with one of the conductive portions. The mobile element also has a beam that is attached to the one or more anchoring members. The beam can be attached to the one or more anchoring members by flexures. The beam has an end portion that is configured to move toward the other conductive portion when exposed to an external force, such as a magnetic field. Various configurations of anchoring members may significantly decrease initial upward beam deformation upon manufacture of the mobile element, resulting in an increased sensitivity upon exposure to a magnetic field. Methods for manufacturing switches that exhibit increased sensitivity to magnetic fields are also disclosed.

摘要翻译： 描述通过暴露于磁场而被致动的开关。 开关的移动元件包括与导电部分之一电接触的一个或多个锚定构件。 移动元件还具有附接到一个或多个锚固构件的梁。 梁可以通过弯曲连接到一个或多个锚固构件。 梁具有端部，其被配置为当暴露于诸如磁场的外力时朝向另一导电部分移动。 锚定构件的各种构造可以在制造移动元件时显着降低初始向上的梁变形，导致暴露于磁场时的灵敏度增加。 还公开了对磁场具有增强的灵敏度的开关的制造方法。

公开(公告)号：US08451016B2

公开(公告)日：2013-05-28

申请号：US12650257

申请日：2009-12-30

申请人： Ravi Shankar ,  Olivier Le Neel

发明人： Ravi Shankar ,  Olivier Le Neel

IPC分类号： G01R31/20 ,  G01R31/00 ,  G01R1/073

CPC分类号： G01R1/07378 ,  G01R1/07342 ,  G01R31/31702 ,  G01R31/318511 ,  G01R31/3278

摘要： A testing mechanism for testing magnetically operated microelectromechanical system (MEMS) switches at a wafer level stage of manufacture includes an electromagnetic fixture configured to be received in a standard probe ring. The electromagnetic fixture is rotatable, relative to the probe ring, to permit adjustment of orientation of a generated magnetic field relative to the MEMS devices of a subject wafer. The testing mechanism also includes a probe card with probes positioned to contact test pads on the subject wafer. During operation, the probe card is positioned over the wafer to be tested, with the test probes in electrical contact with respective contact pads of the wafer, and the electromagnetic fixture is positioned above the probe card. An electrical potential is applied across the switches on the subject wafer, and the electromagnetic fixture is energized at selected levels of power and duration. Current flow across each switch is measured to determine one or more of: open circuit contact resistance, closed circuit contact resistance, response time, response to switching magnetic field, frequency response, current capacity, critical dimensions, critical angles of magnetic field orientation, etc. Wafer level testing enables rejection of non-compliant switches before the cutting and packaging levels of manufacture.

摘要翻译： 用于在晶片级制造阶段测试磁操作微机电系统（MEMS）开关的测试机构包括被配置为接收在标准探针环中的电磁夹具。 电磁夹具相对于探针环可旋转，以允许相对于目标晶片的MEMS器件调整产生的磁场的取向。 测试机构还包括具有探针的探针卡，所述探针被定位成接触主体晶片上的测试焊盘。 在操作期间，探针卡位于要测试的晶片上，测试探针与晶片的相应接触焊盘电接触，并且电磁夹具位于探针卡上方。 在主体晶片上的开关上施加电势，并且电磁夹具以选定的功率和持续时间被激励。 测量每个开关上的电流，以确定以下一个或多个：开路接触电阻，闭路接触电阻，响应时间，对开关磁场的响应，频率响应，电流容量，临界尺寸，磁场定向的临界角等 晶圆级别测试在切割和封装制造水平之前能够拒绝不符合标准的开关。