发明授权
- 专利标题: Three-dimensional semiconductor devices and methods of fabricating the same
- 专利标题(中): 三维半导体器件及其制造方法
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申请号: US14152440申请日: 2014-01-10
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公开(公告)号: US09019739B2公开(公告)日: 2015-04-28
- 发明人: Jintaek Park , Kohji Kanamori , Youngwoo Park , Jaeduk Lee
- 申请人: Jintaek Park , Kohji Kanamori , Youngwoo Park , Jaeduk Lee
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Harness, Dickey & Pierce, PLC
- 优先权: KR10-2013-0003277 20130111
- 主分类号: G11C5/02
- IPC分类号: G11C5/02 ; H01L27/115 ; G11C7/02 ; G11C7/18 ; G11C7/10
摘要:
According to example embodiments of inventive concepts, a three-dimensional semiconductor device may include: a memory cell array including memory cells that may be arranged three-dimensionally, the memory cell array including a left side opposite a right side, and a top side opposite a bottom side in a plan view; at least one word line decoder adjacent to at least one of the left and right sides of the memory cell array; a page buffer adjacent to the bottom side of the memory cell array; and a string selection line decoder adjacent to one of the top and bottom sides of the memory cell array.
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