发明授权
- 专利标题： Micromechanical semiconductor sensing device
- 专利标题（中）： 微机械半导体感测装置
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申请号： US13329618申请日： 2011-12-19
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公开(公告)号： US09021887B2公开(公告)日： 2015-05-05
- 发明人: Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
- 申请人： Franz-Peter Kalz , Horst Theuss , Bernhard Winkler , Khalil Hosseini , Joachim Mahler , Manfred Mengel
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： G01B7/16
- IPC分类号： G01B7/16 ; B81B7/02 ; G01L9/00 ; G01L19/00
摘要：
Micromechanical semiconductor sensing device comprises a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, said piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
公开/授权文献
- US20130152696A1 MICROMECHANICAL SEMICONDUCTOR SENSING DEVICE 公开/授权日：2013-06-20
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