- 专利标题: Wafer level phosphor coating method and devices fabricated utilizing method
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申请号: US11656759申请日: 2007-01-22
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公开(公告)号: US09024349B2公开(公告)日: 2015-05-05
- 发明人: Ashay Chitnis , James Ibbetson , Arpan Chakraborty , Eric J. Tarsa , Bernd Keller , James Seruto , Yankun Fu
- 申请人: Ashay Chitnis , James Ibbetson , Arpan Chakraborty , Eric J. Tarsa , Bernd Keller , James Seruto , Yankun Fu
- 申请人地址: US CA Goleta
- 专利权人: Cree, Inc.
- 当前专利权人: Cree, Inc.
- 当前专利权人地址: US CA Goleta
- 代理机构: Koppel, Patrick, Heybl & Philpott
- 主分类号: H01L33/38
- IPC分类号: H01L33/38 ; H01L33/62 ; H01L33/44 ; H01L33/50 ; H01L23/31
摘要:
Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
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