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    Flip-chip phosphor coating method and devices fabricated utilizing method
    1.
    发明申请
    Flip-chip phosphor coating method and devices fabricated utilizing method 有权
    倒装芯片荧光粉涂布方法和使用方法制造的器件

    公开(公告)号：US20090179207A1

    公开(公告)日：2009-07-16

    申请号：US12008477

    申请日：2008-01-11

    申请人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller

    发明人： Ashay Chitnis ,  James Ibbetson ,  Bernd Keller

    IPC分类号： H01L33/00

    CPC分类号： H01L33/44 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L33/502 ,  H01L33/505 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/13 ,  H01L2933/0041 ,  H01L2933/0066

    摘要： Methods for fabricating light emitting diode (LED) chips one of which comprises flip-chip mounting a plurality of LEDs on a surface of a submount wafer and forming a coating over said LEDs. The coating comprising a conversion material at least partially covering the LEDs. The coating is planarized to the desired thickness with the coating being continuous and unobstructed on the top surface of the LEDs. The LEDs chips are then singulated from the submount wafer. An LED chip comprising a lateral geometry LED having first and second contacts, with the LED flip-chip mounted to a submount by a conductive bonding material. A phosphor loaded binder coats and at least partially covers the LED. The binder provides a substantially continuous and unobstructed coating over the LED. The phosphor within the coating absorbs and converts the wavelength of at least some of the LED light with the coating planarized to achieve the desired emission color point of the LED chip.

    摘要翻译： 制造发光二极管（LED）芯片的方法，其中之一包括倒装芯片，将多个LED安装在底座晶片的表面上并在所述LED上形成涂层。 所述涂层包含至少部分地覆盖所述LED的转化材料。 将涂层平坦化到所需的厚度，涂层在LED的顶表面上是连续的并且不受阻碍。 然后将LED芯片从底座晶片分离。 一种LED芯片，包括具有第一和第二触点的侧向几何形状LED，其中LED倒装芯片通过导电接合材料安装到基座。 荧光体负载的粘合剂涂层并且至少部分地覆盖LED。 粘合剂在LED上提供基本上连续且无障碍的涂层。 涂层内的荧光体吸收并转换至少一些LED光的波长，使涂层平坦化，以达到LED芯片的期望的发射色点。

    Bulk acoustic device and method for fabricating
    3.
    发明授权
    Bulk acoustic device and method for fabricating 有权
    体积声学装置及其制造方法

    公开(公告)号：US07982363B2

    公开(公告)日：2011-07-19

    申请号：US11803449

    申请日：2007-05-14

    申请人： Ashay Chitnis

    发明人： Ashay Chitnis

    IPC分类号： H03H9/125

    CPC分类号： H03H3/04 ,  H03H9/0542 ,  H03H9/174 ,  H03H2003/023 ,  Y10T29/42

    摘要： A method for fabricating a bulk acoustic wave (BAW) device comprising providing a growth substrate and growing an Group-III nitride epitaxial layer on the growth substrate. A first electrode is deposited on the epitaxial layer. A carrier substrate is provided and the growth substrate, epitaxial layer and first electrode combination is flip-chip mounted on the carrier substrate. The growth substrate is removed and a second electrode is deposited on the epitaxial layer with the epitaxial layer sandwiched between the first and second electrodes. A bulk acoustic wave (BAW) device comprises first and second metal electrodes and a Group-III nitride epitaxial layer sandwiched between the first and second electrodes. A carrier substrate is included, with the first and second electrodes and epitaxial layer on the carrier substrate.

    摘要翻译： 一种用于制造体声波（BAW）器件的方法，包括提供生长衬底并在生长衬底上生长III族氮化物外延层。 第一电极沉积在外延层上。 提供了载体衬底，并且生长衬底，外延层和第一电极组合被倒装芯片安装在载体衬底上。 去除生长衬底，并且第二电极沉积在外延层上，外延层夹在第一和第二电极之间。 体声波（BAW）器件包括夹在第一和第二电极之间的第一和第二金属电极和III族氮化物外延层。 载体衬底包括第一和第二电极以及载体衬底上的外延层。

    EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS
    4.
    发明申请
    EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS 有权
    排放调谐方法和装置制造用途方法

    公开(公告)号：US20090261358A1

    公开(公告)日：2009-10-22

    申请号：US12414457

    申请日：2009-03-30

    申请人： ASHAY CHITNIS ,  JOHN EDMOND ,  JEFFREY CARL BRITT ,  BERND P. KELLER ,  DAVID TODD EMERSON ,  MICHAEL JOHN BERGMANN ,  JASPER S. CABALU

    发明人： ASHAY CHITNIS ,  JOHN EDMOND ,  JEFFREY CARL BRITT ,  BERND P. KELLER ,  DAVID TODD EMERSON ,  MICHAEL JOHN BERGMANN ,  JASPER S. CABALU

    IPC分类号： H01L33/00 ,  H01L21/66 ,  B23B47/00

    CPC分类号： H01L33/508 ,  H01L33/0095 ,  H01L2224/13 ,  H01L2933/0041 ,  Y10T408/47

    摘要： A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.

    摘要翻译： 一种用于制造发光二极管（LED）芯片的方法，包括通常在晶片上提供多个LED，并用转换材料涂覆LED，使得来自LED的至少一些光通过转换材料并被转换。 来自LED芯片的光发射包括来自转换材料的光，通常与LED光结合。 测量至少一些LED芯片的发射特性，并且除去LED上的至少一些转换材料以改变LED芯片的发射特性。 本发明特别适用于在晶片上制造LED芯片，其中LED芯片具有在目标发射特性范围内的发光特性。 该目标范围可以落在CIE曲线上的发射区域内，以减少对来自晶片的LED进行合并的需要。 晶片上的LED芯片的发射特性可以通过在LED上微转换材料来调节到期望的范围。

    Bulk acoustic device and method for fabricating
    6.
    发明申请
    Bulk acoustic device and method for fabricating 有权
    体积声学装置及其制造方法

    公开(公告)号：US20080284541A1

    公开(公告)日：2008-11-20

    申请号：US11803449

    申请日：2007-05-14

    申请人： Ashay Chitnis

    发明人： Ashay Chitnis

    IPC分类号： H03H9/00

    CPC分类号： H03H3/04 ,  H03H9/0542 ,  H03H9/174 ,  H03H2003/023 ,  Y10T29/42

    摘要： A method for fabricating a bulk acoustic wave (BAW) device comprising providing a growth substrate and growing an Group-III nitride epitaxial layer on the growth substrate. A first electrode is deposited on the epitaxial layer. A carrier substrate is provided and the growth substrate, epitaxial layer and first electrode combination is flip-chip mounted on the carrier substrate. The growth substrate is removed and a second electrode is deposited on the epitaxial layer with the epitaxial layer sandwiched between the first and second electrodes. A bulk acoustic wave (BAW) device comprises first and second metal electrodes and a Group-III nitride epitaxial layer sandwiched between the first and second electrodes. A carrier substrate is included, with the first and second electrodes and epitaxial layer on the carrier substrate.

    摘要翻译： 一种用于制造体声波（BAW）器件的方法，包括提供生长衬底并在生长衬底上生长III族氮化物外延层。 第一电极沉积在外延层上。 提供了载体衬底，并且生长衬底，外延层和第一电极组合被倒装芯片安装在载体衬底上。 去除生长衬底，并且第二电极沉积在外延层上，外延层夹在第一和第二电极之间。 体声波（BAW）器件包括夹在第一和第二电极之间的第一和第二金属电极和III族氮化物外延层。 载体衬底包括第一和第二电极以及载体衬底上的外延层。

    Permanent wafer bonding using metal alloy preform discs
    7.
    发明申请
    Permanent wafer bonding using metal alloy preform discs 审中-公开
    使用金属合金预制圆盘的永久性晶片接合

    公开(公告)号：US20080096365A1

    公开(公告)日：2008-04-24

    申请号：US11584135

    申请日：2006-10-20

    申请人： Ashay Chitnis

    发明人： Ashay Chitnis

    IPC分类号： H01L21/46 ,  H01L33/00

    CPC分类号： H01L33/0079

    摘要： A method for fabricating semiconductor devices at the wafer level, and devices fabricated using the method, are described. Wafer-level bonding using a relatively thick layer of electrically conducting bond medium was used to achieve void-free permanent wafer level bonding. The bond medium can be introduced to the pre-bonded wafers by deposition or as a preform. The invention provides a low cost, simple and reliable wafer bonding technology which can be used in a variety of device fabrication processes, including flip chip packaging.

    摘要翻译： 描述了在晶片级制造半导体器件的方法以及使用该方法制造的器件。 使用相对厚的导电接合介质层的晶片级结合来实现无空隙的永久晶片级结合。 可以通过沉积或作为预成型体将粘结介质引入预接合的晶片。 本发明提供了一种低成本，简单且可靠的晶片接合技术，其可用于各种器件制造工艺，包括倒装芯片封装。

    Selective wet etching of gold-tin based solder
    9.
    发明授权
    Selective wet etching of gold-tin based solder 有权

    公开(公告)号：US08617997B2

    公开(公告)日：2013-12-31

    申请号：US11894917

    申请日：2007-08-21

    申请人： Ashay Chitnis

    发明人： Ashay Chitnis

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L33/36 ,  H01L33/005

    摘要： The present invention is directed to post-deposition, wet etch processes for patterning AuSn solder material and devices fabricated using such processes. The processes can be applied to uniform AuSn layers to generate submicron patterning of thin AuSn layers having a wide variety of features. The use of multiple etching steps that alternate between different mixes of chemicals enables the etch to proceed effectively, and the same or similar processes can be used to etch under bump metallization. The processes are simple, cost-effective, do not contaminate equipment or tools, and are compatible with standard cleanroom fabrication processes.