发明授权
- 专利标题: Semiconductor device for a DC-DC converter
- 专利标题(中): 用于DC-DC转换器的半导体器件
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申请号: US12767071申请日: 2010-04-26
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公开(公告)号: US09024423B2公开(公告)日: 2015-05-05
- 发明人: Akira Muto , Yuichi Machida , Nobuya Koike , Atsushi Fujiki , Masaki Tamura
- 申请人: Akira Muto , Yuichi Machida , Nobuya Koike , Atsushi Fujiki , Masaki Tamura
- 申请人地址: JP Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kanagawa
- 代理机构: Mattingly & Malur, P.C.
- 优先权: JP2009-136611 20090605
- 主分类号: H01L23/02
- IPC分类号: H01L23/02 ; H01L25/07 ; H01L23/495 ; H01L21/56 ; H01L23/31
摘要:
A semiconductor chip in which a power MOSFET is placed above a semiconductor chip in which another power MOSFET is formed and they are sealed with an encapsulation resin. The semiconductor chips are so arranged that the upper semiconductor chip does not overlap with a gate pad electrode of the lower semiconductor chip in a plan view. The semiconductor chips are identical in size and the respective source pad electrodes and gate pad electrodes of the lower semiconductor chip and the upper semiconductor chip are identical in shape and arrangement. The lower semiconductor chip and the upper semiconductor chip are arranged with their respective centers displaced from each other. Accordingly, the size of a semiconductor device can be reduced.
公开/授权文献
- US20100308421A1 SEMICONDUCTOR DEVICE 公开/授权日:2010-12-09
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