发明授权
- 专利标题： Semiconductor device, formation method thereof, and package structure
- 专利标题（中）： 半导体器件，其形成方法和封装结构
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申请号： US13379347申请日： 2011-08-12
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公开(公告)号： US09024435B2公开(公告)日： 2015-05-05
- 发明人: Huicai Zhong , Qingqing Liang , Jiang Yan , Chao Zhao
- 申请人： Huicai Zhong , Qingqing Liang , Jiang Yan , Chao Zhao
- 申请人地址： CN Beijing, P.R.
- 专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人地址： CN Beijing, P.R.
- 代理机构： Goodwin Procter LLP
- 优先权： CN201110112565 20110430
- 国际申请： PCT/CN2011/078325 WO 20110812
- 国际公布： WO2012/149706 WO 20120811
- 主分类号： H01L23/34
- IPC分类号： H01L23/34 ; H01L23/522 ; H01L23/467 ; H01L23/473
摘要：
A semiconductor device, a formation method thereof, and a package structure are provided. The semiconductor device comprises: a semiconductor substrate in which a metal-oxide-semiconductor field-effect transistor (MOSFET) is formed; a dielectric layer, provided on the semiconductor substrate and covering the MOSFET, wherein a plurality of interconnection structures are formed in the dielectric layer; and at least one heat dissipation path, embedded in the dielectric layer between the interconnection structures, for liquid or gas to circulate in the heat dissipation path, wherein openings of the heat dissipation path are exposed on the surface of the dielectric layer. The present invention can improve heat dissipation efficiency, and prevent chips from overheating.