Invention Grant
- Patent Title: Pixel structure having metal-insulator-semiconductor capacitor
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Application No.: US14320657Application Date: 2014-07-01
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Publication No.: US09025098B2Publication Date: 2015-05-05
- Inventor: Hsiao-Wei Cheng , Sung-Hui Lin , Ming-Yung Huang , Pin-Miao Liu , Wen-Shin Wu , Chun-Yao Huang , Wei-Sheng Yu
- Applicant: Au Optronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW99135459A 20101018
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; G02F1/1362

Abstract:
A pixel structure including a scan line, a data line, an active device, a pixel electrode, a capacitor electrode line, a semi-conductive pattern layer and at least one dielectric layer is provided. The active device is electrically connected to the scan line and the data line. The pixel electrode is electrically connected to the active device. The capacitor electrode line is located under the pixel electrode. A first storage capacitor is formed between the capacitor electrode line and the pixel electrode. The semi-conductive pattern layer is disposed between the capacitor electrode line and the pixel electrode, the pixel electrode is electrically connected to the semi-conductive pattern layer. A second storage capacitor is formed between the semi-conductive pattern layer and the capacitor electrode line. The dielectric layer is disposed between the capacitor electrode line and the pixel electrode and located between the semi-conductive pattern layer and the capacitor electrode line.
Public/Granted literature
- US20140313466A1 PIXEL STRUCTURE Public/Granted day:2014-10-23
Information query
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