发明授权
US09029067B2 Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same
有权
用于制造抗蚀剂图案的树脂组合物不溶性,以及通过使用它们形成抗蚀剂图案的方法
- 专利标题: Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same
- 专利标题(中): 用于制造抗蚀剂图案的树脂组合物不溶性,以及通过使用它们形成抗蚀剂图案的方法
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申请号: US14487894申请日: 2014-09-16
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公开(公告)号: US09029067B2公开(公告)日: 2015-05-12
- 发明人: Gouji Wakamatsu , Masafumi Hori , Kouichi Fujiwara , Makoto Sugiura
- 申请人: JSR Corporation
- 申请人地址: JP Tokyo
- 专利权人: JSR Corporation
- 当前专利权人: JSR Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2008-183038 20080714
- 主分类号: G03F7/004
- IPC分类号: G03F7/004 ; G03F7/20 ; G03F7/40 ; G03F7/00 ; G03F7/039 ; H01L21/027
摘要:
A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.
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