公开(公告)号：US11335559B2

公开(公告)日：2022-05-17

申请号：US16940589

申请日：2020-07-28

申请人： JSR CORPORATION

发明人： Hiroyuki Komatsu ,  Tomohiro Oda ,  Masafumi Hori ,  Takehiko Naruoka ,  Tomoki Nagai

IPC分类号： H01L21/027 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/768 ,  C08L53/00 ,  C08F212/08 ,  C08F293/00 ,  C08F12/08 ,  C08F20/14 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

摘要： A pattern-forming method includes: forming a pattern on an upper face side of a substrate; applying a first composition to a sidewall of the pattern; forming a resin layer by applying a second composition to an inner face side of the sidewall of the pattern coated with the first composition; allowing the resin layer to separate into a plurality of phases; and removing at least one of the plurality of phases. The first composition contains a first polymer. The second composition contains a second polymer. The second polymer includes a first block having a first structural unit and a second block having a second structural unit. The polarity of the second structural unit is higher than the polarity of the first structural unit. Immediately before forming of the resin layer, a static contact angle θ (°) of water on the sidewall of the pattern satisfies inequality (1). α ≥ θ ≥ α + β 2 ( 1 )

公开(公告)号：US20190235386A1

公开(公告)日：2019-08-01

申请号：US16376385

申请日：2019-04-05

申请人： JSR Corporation

发明人： Hiroyuki Komatsu ,  Takehiko Naruoka ,  Masafumi Hori ,  Hitoshi Osaki ,  Tomohiro Oda

IPC分类号： G03F7/11 ,  H01L21/308 ,  H01L21/027 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  C08F112/08 ,  C08F212/08

摘要： A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate directly or via other layer. The recessed portions of the base pattern are filled with a first composition to form a filler layer. Phase separation of the filler layer is allowed to form a plurality of phases of the filler layer. A part of the plurality of phases of the filler layer is removed to form a miniaturized pattern. The forming of the base pattern includes: forming a resist pattern on the front face side of the substrate; forming a layer of a second polymer on lateral faces of the resist pattern; and forming a layer of a third polymer that differs from the second polymer on a surface of the substrate or on a surface of the other layer.

公开(公告)号：US20190198317A1

公开(公告)日：2019-06-27

申请号：US16288385

申请日：2019-02-28

申请人： JSR CORPORATION

发明人： Hiroyuki KOMATSU ,  Tomohiro Oda ,  Hitoshi Osaki ,  Masafumi Hori ,  Takehiko Naruoka

IPC分类号： H01L21/027 ,  C23C16/02 ,  H01L21/02 ,  H01L21/311 ,  C09D5/00 ,  C09D125/06 ,  C09D183/04 ,  C09D125/16 ,  C09D133/12 ,  C09D7/20

CPC分类号： H01L21/0271 ,  B05D3/02 ,  B05D7/00 ,  C09D5/008 ,  C09D7/20 ,  C09D125/06 ,  C09D125/16 ,  C09D133/12 ,  C09D183/04 ,  C23C16/0227 ,  H01L21/02118 ,  H01L21/02271 ,  H01L21/02282 ,  H01L21/02334 ,  H01L21/02359 ,  H01L21/3065 ,  H01L21/31133

摘要： A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.

公开(公告)号：US09046765B2

公开(公告)日：2015-06-02

申请号：US14037659

申请日：2013-09-26

申请人： JSR CORPORATION

发明人： Hiromitsu Nakashima ,  Toru Kimura ,  Yusuke Asano ,  Masafumi Hori ,  Reiko Kimura ,  Kazuki Kasahara ,  Hiromu Miyata ,  Masafumi Yoshida

IPC分类号： G03F7/004 ,  C08F12/20 ,  H01L21/027 ,  C08F220/22 ,  C08F220/24 ,  C08F220/28 ,  G03F7/20 ,  G03F7/039 ,  G03F7/11

CPC分类号： G03F7/0041 ,  C08F220/22 ,  C08F220/24 ,  C08F220/28 ,  C08F2220/283 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  H01L21/027 ,  H01L21/0274

摘要： A resist pattern-forming method includes providing a resist film having a surface free energy of 30 to 40 mN/m on a substrate using a radiation-sensitive resin composition. The resist film is exposed by applying radiation via a mask. The exposed resist film is developed. It is preferable that the exposing of the resist film includes exposing the resist film via an immersion liquid that is provided over the resist film.

摘要翻译： 抗蚀剂图案形成方法包括使用辐射敏感性树脂组合物在基板上提供具有30至40mN / m的表面自由能的抗蚀剂膜。 通过经由掩模施加辐射来曝光抗蚀剂膜。 显影出抗蚀剂膜。 优选的是，抗蚀剂膜的曝光包括通过设置在抗蚀剂膜上的浸渍液体曝光抗蚀剂膜。

公开(公告)号：US20190233561A1

公开(公告)日：2019-08-01

申请号：US16239592

申请日：2019-01-04

申请人： JSR CORPORATION

发明人： Hiroyuki KOMATSU ,  Tomohiro Oda ,  Hitoshi Osaki ,  Masafumi Hori ,  Takehiko Naruoka

IPC分类号： C08F220/12 ,  C09D201/02 ,  H01L21/027 ,  C09D153/00 ,  G03F7/00

CPC分类号： C08F220/12 ,  C09D153/00 ,  C09D201/02 ,  G03F7/0002 ,  H01L21/027 ,  H01L21/3065

摘要： A composition for film formation includes a polymer and a solvent. The polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a structural unit on at least one end of a main chain of the polymer. The first repeating unit includes a crosslinkable group. The second repeating unit differs from the first repeating unit. The third repeating unit differs from the first repeating unit and has higher polarity than polarity of the second repeating unit. The structural unit includes an interacting group capable of interacting with Si—OH, Si—H or Si—N.

公开(公告)号：US09513548B2

公开(公告)日：2016-12-06

申请号：US14242957

申请日：2014-04-02

申请人： JSR CORPORATION

发明人： Yuusuke Asano ,  Mitsuo Satou ,  Hiromitsu Nakashima ,  Kazuki Kasahara ,  Yoshifumi Oizumi ,  Masafumi Hori ,  Takanori Kawakami ,  Yasuhiko Matsuda ,  Kazuo Nakahara

IPC分类号： G03F7/039 ,  G03F7/30 ,  C08F20/22 ,  G03F7/004 ,  G03F7/038 ,  G03F7/20

CPC分类号： G03F7/0392 ,  C08F20/22 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0388 ,  G03F7/039 ,  G03F7/20 ,  G03F7/2041 ,  G03F7/30 ,  G03F7/32

摘要： A radiation-sensitive resin composition includes a first polymer including an acid-labile group, an acid generator to generate an acid upon exposure to radiation, and a second polymer including a fluorine atom and a functional group shown by a general formula (x). The second polymer has a fluorine atom content higher than a fluorine atom content of the first polymer. R1 represents an alkali-labile group. A represents an oxygen atom, —NR′—, —CO—O—# or —SO2—O—##, wherein the oxygen atom represented by A is not an oxygen atom bonded directly to an aromatic ring, a carbonyl group, or a sulfoxyl group, R′ represents a hydrogen atom or an alkali-labile group, and “#” and “##” each indicate a bonding hand bonded to R1.

公开(公告)号：US09158196B2

公开(公告)日：2015-10-13

申请号：US13851158

申请日：2013-03-27

申请人： JSR CORPORATION

发明人： Kazuki Kasahara ,  Hiromitsu Nakashima ,  Masafumi Hori ,  Masafumi Yoshida

IPC分类号： G03F7/004 ,  G03F7/20 ,  C08F220/20 ,  H01L21/027 ,  C07D307/93 ,  C07D493/18 ,  G03F7/039 ,  G03F7/38

CPC分类号： G03F7/004 ,  C07D307/93 ,  C07D493/18 ,  C08F220/20 ,  G03F7/039 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/38 ,  H01L21/0274 ,  H01L21/0275

摘要： A radiation-sensitive resin composition for forming a resist film includes a polymer including a first structural unit represented by a formula (1) and a second structural unit represented by a formula (2). The first structural unit and the second structural unit are included in an identical polymer molecule or different polymer molecules. R1 represents a hydrogen atom or a methyl group. Q represents a divalent linking group having 1 to 4 carbon atoms. X represents a monovalent lactone group. A part or all of hydrogen atoms included in the monovalent lactone group represented by X are not substituted or substituted. R2 represents a hydrogen atom or a methyl group. Y represents a monovalent lactone group. A part or all of hydrogen atoms included in the monovalent lactone group represented by Y are not substituted or substituted.

摘要翻译： 用于形成抗蚀剂膜的辐射敏感性树脂组合物包括含有由式（1）表示的第一结构单元和由式（2）表示的第二结构单元的聚合物。 第一结构单元和第二结构单元包含在相同的聚合物分子或不同的聚合物分子中。 R1表示氢原子或甲基。 Q表示碳原子数为1〜4的二价连接基团。 X表示单价内酯基。 由X表示的一价内酯基中的一部分或全部氢原子不被取代或取代。 R2表示氢原子或甲基。 Y表示单价内酯基。 由Y表示的一价内酯基中包含的一部分或全部氢原子不被取代或取代。

公开(公告)号：US09029067B2

公开(公告)日：2015-05-12

申请号：US14487894

申请日：2014-09-16

申请人： JSR Corporation

发明人： Gouji Wakamatsu ,  Masafumi Hori ,  Kouichi Fujiwara ,  Makoto Sugiura

IPC分类号： G03F7/004 ,  G03F7/20 ,  G03F7/40 ,  G03F7/00 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2024 ,  H01L21/0273

摘要： A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.

摘要翻译： 抗蚀剂图案不溶化树脂组合物用于抗蚀剂图案形成方法。 抗蚀剂图案不溶化树脂组合物包括溶剂和树脂。 树脂包括在其侧链中包含羟基的第一重复单元和由下式（1-1）所示的单体衍生的第二重复单元和由下式表示的单体衍生的第三重复单元中的至少一种： 下述式（1-2）表示的基团，其中，例如，R1表示氢原子，A表示亚甲基，R2表示下述式（2-1）所示的基团或下述式（2- 2）中，R3表示亚甲基，R4表示氢原子，n表示0或1，R34表示氢原子和碳原子数1〜10的直链或支链烷基中的至少一种。

公开(公告)号：US11211246B2

公开(公告)日：2021-12-28

申请号：US16288385

申请日：2019-02-28

申请人： JSR CORPORATION

发明人： Hiroyuki Komatsu ,  Tomohiro Oda ,  Hitoshi Osaki ,  Masafumi Hori ,  Takehiko Naruoka

IPC分类号： H01L21/027 ,  B05D3/02 ,  B05D7/14 ,  C09D1/00 ,  H01L21/321 ,  H01L21/02 ,  B05D3/14 ,  C09D7/61 ,  C08F112/08 ,  B05D1/32 ,  B05D3/10 ,  C08F8/00 ,  H01L21/768 ,  C09D7/20 ,  C09D5/00 ,  C09D125/06 ,  C09D125/16 ,  C09D133/12 ,  C09D183/04 ,  C23C16/02 ,  H01L21/311 ,  C08F120/14 ,  B05D1/00

摘要： A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.

公开(公告)号：US20180342387A1

公开(公告)日：2018-11-29

申请号：US16057017

申请日：2018-08-07

申请人： JSR CORPORATION

发明人： Hiroyuki Komatsu ,  Tomohiro Oda ,  Masafumi Hori ,  Takehiko Naruoka ,  Tomoki Nagai

IPC分类号： H01L21/027 ,  G03F7/16 ,  C08F12/08 ,  C08F20/14 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/32 ,  H01L21/768

摘要： A pattern-forming method includes: forming a pattern on an upper face side of a substrate; applying a first composition to a sidewall of the pattern; forming a resin layer by applying a second composition to an inner face side of the sidewall of the pattern coated with the first composition; allowing the resin layer to separate into a plurality of phases; and removing at least one of the plurality of phases. The first composition contains a first polymer. The second composition contains a second polymer. The second polymer includes a first block having a first structural unit and a second block having a second structural unit. The polarity of the second structural unit is higher than the polarity of the first structural unit. Immediately before forming of the resin layer, a static contact angle θ (°) of water on the sidewall of the pattern satisfies inequality (1). α ≥ θ ≥ α + β 2 ( 1 )