Invention Grant
US09029239B2 Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction
有权
通过蚀刻设置在半导体器件和衬底之间的分级组合物释放层来分离半导体器件与衬底，包括形成减少静电的突起
- Patent Title: Separating semiconductor devices from substrate by etching graded composition release layer disposed between semiconductor devices and substrate including forming protuberances that reduce stiction
- Patent Title (中): 通过蚀刻设置在半导体器件和衬底之间的分级组合物释放层来分离半导体器件与衬底，包括形成减少静电的突起
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Application No.: US14067433Application Date: 2013-10-30
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Publication No.: US09029239B2Publication Date: 2015-05-12
- Inventor: Anna Tauke-Pedretti , Gregory N. Nielson , Jeffrey G. Cederberg , Jose Luis Cruz-Campa
- Applicant: Sandia Corporation
- Applicant Address: US NM Albuquerque
- Assignee: Sandia Corporation
- Current Assignee: Sandia Corporation
- Current Assignee Address: US NM Albuquerque
- Agent Martin I. Finston
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L31/0735 ; H01L31/18
Abstract:
A method includes etching a release layer that is coupled between a plurality of semiconductor devices and a substrate with an etch. The etching includes etching the release layer between the semiconductor devices and the substrate until the semiconductor devices are at least substantially released from the substrate. The etching also includes etching a protuberance in the release layer between each of the semiconductor devices and the substrate. The etch is stopped while the protuberances remain between each of the semiconductor devices and the substrate. The method also includes separating the semiconductor devices from the substrate. Other methods and apparatus are also disclosed.
Public/Granted literature
Information query
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