Invention Grant
US09030002B2 Semiconductor device having IPD structure with smooth conductive layer and bottom-side conductive layer
有权
具有IPD结构的具有光滑导电层和底侧导电层的半导体器件
- Patent Title: Semiconductor device having IPD structure with smooth conductive layer and bottom-side conductive layer
- Patent Title (中): 具有IPD结构的具有光滑导电层和底侧导电层的半导体器件
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Application No.: US13090590Application Date: 2011-04-20
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Publication No.: US09030002B2Publication Date: 2015-05-12
- Inventor: Yaojian Lin
- Applicant: Yaojian Lin
- Applicant Address: SG Singapore
- Assignee: STATS ChipPAC, Ltd.
- Current Assignee: STATS ChipPAC, Ltd.
- Current Assignee Address: SG Singapore
- Agency: Patent Law Group: Atkins and Associates, P.C.
- Agent Robert D. Atkins
- Main IPC: H01L23/053
- IPC: H01L23/053 ; H01L23/498 ; H01L21/48 ; H01L21/683 ; H01L49/02 ; H01L23/00
Abstract:
A semiconductor device includes an interface layer, a smooth conductive layer disposed over the interface layer, and a first insulating layer disposed over a first surface of the smooth conductive layer. A first conductive layer is disposed over the first insulating layer and the interface layer, and the first conductive layer contacts the first insulating layer. A second insulating layer is disposed over the second insulating layer and the first conductive layer, and a second conductive layer is disposed below the first conductive layer and contacts a second surface of the smooth conductive layer. The second surface of the smooth conductive layer is opposite the first surface of the smooth conductive layer. A third insulating layer is disposed over the first insulating layer and the first surface of the smooth conductive layer, and a fourth insulating layer is disposed below the second conductive layer and the interface layer.
Public/Granted literature
- US20110210420A1 Semiconductor Device Having IPD Structure with Smooth Conductive Layer and Bottom-Side Conductive Layer Public/Granted day:2011-09-01
Information query
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