Invention Grant
- Patent Title: Low resistance area magnetic stack
- Patent Title (中): 低电阻面积磁堆
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Application No.: US13690532Application Date: 2012-11-30
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Publication No.: US09034491B2Publication Date: 2015-05-19
- Inventor: Vijay Karthik Sankar , Mark William Covington
- Applicant: Seagate Technology LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Hall Estill Attorneys at Law
- Main IPC: G11B5/39
- IPC: G11B5/39 ; G01R33/00 ; G11B5/31 ; H01F10/32 ; G11C11/16 ; H01L43/08 ; H01L43/12 ; G01R33/09

Abstract:
A magnetic element may generally be configured at least with a magnetic stack having a multilayer barrier structure disposed between first and second ferromagnetic layers. The multilayer barrier structure can have a binary compound layer disposed between first and second alloy layers with the binary compound having a metal element and a second element where at least one alloy layer has the metal element and a third element dissimilar from the second element.
Public/Granted literature
- US20140154528A1 Low Resistance Area Magnetic Stack Public/Granted day:2014-06-05
Information query
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