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US09034491B2 Low resistance area magnetic stack 有权
低电阻面积磁堆

Low resistance area magnetic stack
Abstract:
A magnetic element may generally be configured at least with a magnetic stack having a multilayer barrier structure disposed between first and second ferromagnetic layers. The multilayer barrier structure can have a binary compound layer disposed between first and second alloy layers with the binary compound having a metal element and a second element where at least one alloy layer has the metal element and a third element dissimilar from the second element.
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