Invention Grant
- Patent Title: Methods of forming patterns
- Patent Title (中): 形成图案的方法
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Application No.: US14192410Application Date: 2014-02-27
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Publication No.: US09034570B2Publication Date: 2015-05-19
- Inventor: Scott E. Sills , Gurtej S. Sandhu , John Smythe , Ming Zhang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: G03F7/26
- IPC: G03F7/26 ; H01L21/027 ; G03F7/40 ; H01L21/033 ; G03F7/20

Abstract:
Some embodiments include methods of forming patterns of openings. The methods may include forming spaced features over a substrate. The features may have tops and may have sidewalls extending downwardly from the tops. A first material may be formed along the tops and sidewalls of the features. The first material may be formed by spin-casting a conformal layer of the first material across the features, or by selective deposition along the features relative to the substrate. After the first material is formed, fill material may be provided between the features while leaving regions of the first material exposed. The exposed regions of the first material may then be selectively removed relative to both the fill material and the features to create the pattern of openings.
Public/Granted literature
- US20140179115A1 Methods of Forming Patterns Public/Granted day:2014-06-26
Information query
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