发明授权
US09034701B2 Semiconductor device with a low-k spacer and method of forming the same
有权
具有低k间隔物的半导体器件及其形成方法
- 专利标题： Semiconductor device with a low-k spacer and method of forming the same
- 专利标题（中）： 具有低k间隔物的半导体器件及其形成方法
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申请号： US13354363申请日： 2012-01-20
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公开(公告)号： US09034701B2公开(公告)日： 2015-05-19
- 发明人: Kangguo Cheng , Bruce B Doris , Ali Khakifirooz , Douglas C La Tulipe
- 申请人： Kangguo Cheng , Bruce B Doris , Ali Khakifirooz , Douglas C La Tulipe
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理商 Matthew Zehrer
- 主分类号： H01L21/338
- IPC分类号： H01L21/338 ; H01L29/66 ; H01L29/772 ; H01L29/78 ; H01L29/786
摘要：
A device includes a semiconductor substrate. A gate stack on the semiconductor substrate includes a gate dielectric layer and a gate conductor layer. Low-k spacers are adjacent to the gate dielectric layer. Raised source/drain (RSD) regions are adjacent to the low-k spacers. The low-k spacers are embedded in an ILD on the RSD regions.
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