发明授权
- 专利标题: Semiconductor device and method of manufacturing the same
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12438869申请日: 2007-08-22
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公开(公告)号: US09034729B2公开(公告)日: 2015-05-19
- 发明人: Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
- 申请人: Hiroshi Yamada , Katsuhiko Kitagawa , Kazuo Okada , Yuichi Morita , Hiroyuki Shinogi , Shinzo Ishibe , Yoshinori Seki , Takashi Noma
- 申请人地址: US AZ Phoenix
- 专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人地址: US AZ Phoenix
- 代理商 Robert F. Hightower
- 优先权: JP2006-229016 20060825; JP2007-045491 20070226
- 国际申请: PCT/JP2007/066699 WO 20070822
- 国际公布: WO2008/023824 WO 20080228
- 主分类号: H01L21/30
- IPC分类号: H01L21/30 ; H01L27/146 ; B81C1/00
摘要:
An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting body 5 having a penetration hole 6 penetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substrate 2 with an adhesive layer 4 being interposed therebetween. A device element 1 and wiring layers 3 are formed on the front surface of the semiconductor substrate 2. A second supporting body 7 is attached to the first supporting body 5 with an adhesive layer 8 being interposed therebetween so as to cover the penetration hole 6. The device element 1 is sealed in a cavity 9 surrounded by the semiconductor substrate 2, the first supporting body 5 and the second supporting body 7.
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