发明授权
- 专利标题： Semiconductor devices and fabrication methods
- 专利标题（中）： 半导体器件及制造方法
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申请号： US14002826申请日： 2012-02-29
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公开(公告)号： US09034739B2公开(公告)日： 2015-05-19
- 发明人: Tao Wang
- 申请人： Tao Wang
- 申请人地址： GB Bridgend
- 专利权人： Seren Photonics Limited
- 当前专利权人： Seren Photonics Limited
- 当前专利权人地址： GB Bridgend
- 代理机构： Fraser Clemens Martin & Miller LLC
- 代理商 William J. Clemens
- 优先权： GB1103657.1 20110303
- 国际申请： PCT/GB2012/050458 WO 20120229
- 国际公布： WO2012/117247 WO 20120907
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/02 ; H01L33/00 ; H01L29/06 ; H01L29/20 ; H01L33/32 ; H01L33/18
摘要：
A method of making a semiconductor device comprises: providing a semiconductor wafer having a semiconductor layer; forming a first mask layer over the semiconductor layer; forming a second mask layer over the first mask layer; annealing the second mask layer to form islands; etching through the first mask layer and the semiconductor layer using the islands as a mask to form an array of pillars; and growing semiconductor material between the pillars and then over the tops of the pillars.
公开/授权文献
- US20140299968A1 SEMICONDUCTOR DEVICES AND FABRICATION METHODS 公开/授权日：2014-10-09
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