Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14046324Application Date: 2013-10-04
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Publication No.: US09034742B2Publication Date: 2015-05-19
- Inventor: Suk-Hun Choi , Chan-Sam Chang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: F. Chau & Associates, LLC
- Main IPC: H01L21/266
- IPC: H01L21/266 ; H01L21/308 ; H01L21/3065
Abstract:
A method for fabricating a semiconductor device is provided. An ion implantation mask exposing a portion of a semiconductor substrate is formed on the semiconductor substrate. The implantation mask includes a second hardmask layer having a first thickness and a second hardmask layer having a second thickness. The first hardmask layer is disposed between the second hardmask layer and the semiconductor substrate. An ion implantation process is performed on the exposed portion of the semiconductor substrate using the implantation mask. The implantation mask is removed without forming an etch mask layer on the exposed portion of the semiconductor substrate.
Public/Granted literature
- US20150099351A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2015-04-09
Information query
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