公开(公告)号：US20150099351A1

公开(公告)日：2015-04-09

申请号：US14046324

申请日：2013-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk-Hun Choi ,  Chan-Sam Chang

IPC: H01L21/266 ,  H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/266

Abstract: A method for fabricating a semiconductor device is provided. An ion implantation mask exposing a portion of a semiconductor substrate is formed on the semiconductor substrate. The implantation mask includes a second hardmask layer having a first thickness and a second hardmask layer having a second thickness. The first hardmask layer is disposed between the second hardmask layer and the semiconductor substrate. An ion implantation process is performed on the exposed portion of the semiconductor substrate using the implantation mask. The implantation mask is removed without forming an etch mask layer on the exposed portion of the semiconductor substrate.

Abstract translation: 提供一种制造半导体器件的方法。 在半导体衬底上形成暴露半导体衬底的一部分的离子注入掩模。 注入掩模包括具有第一厚度的第二硬掩模层和具有第二厚度的第二硬掩模层。 第一硬掩模层设置在第二硬掩模层和半导体衬底之间。 使用注入掩模对半导体衬底的暴露部分进行离子注入工艺。 去除注入掩模，而不在半导体衬底的暴露部分上形成蚀刻掩模层。

公开(公告)号：US09034742B2

公开(公告)日：2015-05-19

申请号：US14046324

申请日：2013-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk-Hun Choi ,  Chan-Sam Chang

IPC: H01L21/266 ,  H01L21/308 ,  H01L21/3065

CPC classification number: H01L21/266

Abstract: A method for fabricating a semiconductor device is provided. An ion implantation mask exposing a portion of a semiconductor substrate is formed on the semiconductor substrate. The implantation mask includes a second hardmask layer having a first thickness and a second hardmask layer having a second thickness. The first hardmask layer is disposed between the second hardmask layer and the semiconductor substrate. An ion implantation process is performed on the exposed portion of the semiconductor substrate using the implantation mask. The implantation mask is removed without forming an etch mask layer on the exposed portion of the semiconductor substrate.

Abstract translation: 提供一种制造半导体器件的方法。 在半导体衬底上形成暴露半导体衬底的一部分的离子注入掩模。 注入掩模包含具有第一厚度的第二硬掩模层和具有第二厚度的第二硬掩模层。 第一硬掩模层设置在第二硬掩模层和半导体衬底之间。 使用注入掩模对半导体衬底的暴露部分进行离子注入工艺。 去除注入掩模，而不在半导体衬底的暴露部分上形成蚀刻掩模层。