Invention Grant
US09035451B2 Wafer level sealing methods with different vacuum levels for MEMS sensors
有权
MEMS传感器的不同真空度的晶圆级密封方法
- Patent Title: Wafer level sealing methods with different vacuum levels for MEMS sensors
- Patent Title (中): MEMS传感器的不同真空度的晶圆级密封方法
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Application No.: US14041298Application Date: 2013-09-30
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Publication No.: US09035451B2Publication Date: 2015-05-19
- Inventor: Yu-Chia Liu , Chia-Hua Chu , Kuei-Sung Chang , Chun-Wen Cheng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81B3/00 ; H01L29/84 ; H01L21/02 ; B81C1/00

Abstract:
The present disclosure relates to a method of forming a plurality of MEMs device having a plurality of cavities with different pressures on a wafer package system, and an associated apparatus. In some embodiments, the method is performed by providing a work-piece having a plurality of microelectromechanical system (MEMs) devices. A cap wafer is bonded onto the work-piece in a first ambient environment having a first pressure. The bonding forms a plurality of cavities abutting the plurality of MEMs devices, which are held at the first pressure. One or more openings are formed in one or more of the plurality of cavities leading to a gas flow path that could be held at a pressure level different from the first pressure. The one or more openings in the one or more of the plurality of cavities are then sealed in a different ambient environment having a different pressure, thereby causing the one or more of the plurality of cavities to be held at the different pressure.
Public/Granted literature
- US20150091153A1 WAFER LEVEL SEALING METHODS WITH DIFFERENT VACUUM LEVELS FOR MEMS SENSORS Public/Granted day:2015-04-02
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