发明授权
- 专利标题： Piezoelectric thin-film resonator and method for manufacturing the same
- 专利标题（中）： 压电薄膜谐振器及其制造方法
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申请号： US13563505申请日： 2012-07-31
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公开(公告)号： US09035536B2公开(公告)日： 2015-05-19
- 发明人: Masanori Ueda , Shinji Taniguchi , Tokihiro Nishihara
- 申请人： Masanori Ueda , Shinji Taniguchi , Tokihiro Nishihara
- 申请人地址： JP Tokyo
- 专利权人： Taiyo Yuden Co., Ltd.
- 当前专利权人： Taiyo Yuden Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Chen Yoshimura LLP
- 优先权： JP2011-169603 20110802
- 主分类号： H01L41/09
- IPC分类号： H01L41/09 ; H03H3/04 ; H03H9/17 ; H03H3/02
摘要：
A piezoelectric thin-film resonator includes: a lower electrode provided on a substrate; a piezoelectric film that is provided on the lower electrode and includes at least two layers; an upper electrode that is provided on the piezoelectric film and has a region sandwiching the piezoelectric film with the lower electrode and facing the lower electrode; and an insulating film that is provided in a region in which the lower electrode and the upper electrode face each other and between each of the at least two layers, wherein an upper face of the insulating film is flatter than a lower face of the insulating film.
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