Invention Grant
US09036441B2 Anti-fuse circuit in which anti-fuse cell data is monitored, and semiconductor device including the same
有权
防熔丝电池数据被监视的反熔丝电路,以及包括其的半导体器件
- Patent Title: Anti-fuse circuit in which anti-fuse cell data is monitored, and semiconductor device including the same
- Patent Title (中): 防熔丝电池数据被监视的反熔丝电路,以及包括其的半导体器件
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Application No.: US13793457Application Date: 2013-03-11
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Publication No.: US09036441B2Publication Date: 2015-05-19
- Inventor: Jong-Min Oh , Ho-Young Song , Seong-Jin Jang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law
- Priority: KR10-2012-0046419 20120502
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/18 ; G11C17/16 ; G11C29/00

Abstract:
An anti-fuse circuit in which anti-fuse program data may be monitored outside of the anti-fuse circuit and a semiconductor device including the anti-fuse circuit are disclosed. The anti-fuse circuit includes an anti-fuse array, a data storage circuit, and a first selecting circuit. The anti-fuse array includes one or more anti-fuse blocks including a first anti-fuse block having a plurality of anti-fuse cells and the anti-fuse array is configured to store anti-fuse program data. The data storage circuit is configured to receive and store the anti-fuse program data from the anti-fuse array through one or more data buses. The first selecting circuit is configured to output anti-fuse program data of a selected anti-fuse block of the one or more anti-fuse blocks in response to a first selection signal.
Public/Granted literature
- US20130294140A1 ANTI-FUSE CIRCUIT IN WHICH ANTI-FUSE CELL DATA IS MONITORED, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2013-11-07
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