Methods are provided for fabricating an integrated circuit that includes gate to active contacts. One method includes forming a dummy gate structure including a dummy gate electrode having sidewalls and overlying a semiconductor substrate and first and second sidewall spacers on the sidewalls of the dummy gate electrode. The method includes removing the dummy gate electrode to form a trench bounded by the first and second sidewall spacers. The method removes an upper portion of the first sidewall spacer and deposits a layer of metal in the trench and over a remaining portion of the first sidewall spacer to form a gate electrode and an interconnect.