Invention Grant
- Patent Title: 3D semiconductor device and 3D logic array structure thereof
- Patent Title (中): 3D半导体器件及其3D逻辑阵列结构
-
Application No.: US14042776Application Date: 2013-10-01
-
Publication No.: US09041068B2Publication Date: 2015-05-26
- Inventor: Shih-Hung Chen
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/118
- IPC: H01L27/118

Abstract:
A 3D semiconductor device and a 3D logic array structure thereof are provided. The 3D semiconductor device includes an array structure, a periphery line structure and a 3D logic array structure. The array structure has Y contacts located at a side of the array structure. Y is within MN-1 to MN. Y, M and N are natural numbers. M is larger or equal to 2. The 3D logic array structure includes N sets of gate electrodes, an input electrode and Y output electrodes. Each set of the gate electrodes has M gate electrodes. The Y output electrodes connect the Y contacts. The M·N gate electrodes and the input electrode connect the periphery line structure.
Public/Granted literature
- US20150091064A1 3D SEMICONDUCTOR DEVICE AND 3D LOGIC ARRAY STRUCTURE THEREOF Public/Granted day:2015-04-02
Information query
IPC分类: