- 专利标题: Memory device having a local current sink
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申请号: US12778337申请日: 2010-05-12
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公开(公告)号: US09042163B2公开(公告)日: 2015-05-26
- 发明人: Jung Pill Kim , Hari Rao
- 申请人: Jung Pill Kim , Hari Rao
- 申请人地址: US CA San Diego
- 专利权人: QUALCOMM Incorporated
- 当前专利权人: QUALCOMM Incorporated
- 当前专利权人地址: US CA San Diego
- 代理商 Donald D. Min
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C29/02 ; G11C29/12 ; G11C13/00
摘要:
A memory device having a local current sink is disclosed. In a particular embodiment, an electronic device is disclosed. The electronic device includes one or more write drivers. The electronic device includes at least one Magnetic Tunnel Junction (MTJ) coupled to a bit line and coupled to a source line. The electronic device also includes a current sink circuit comprising a single transistor, the single transistor coupled to the bit line and to the source line.
公开/授权文献
- US20110280057A1 Memory Device Having A Local Current Sink 公开/授权日:2011-11-17