发明授权
- 专利标题: Charge pump redundancy in a memory
- 专利标题(中): 存储器中的电荷泵冗余
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申请号: US13995166申请日: 2012-03-25
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公开(公告)号: US09042180B2公开(公告)日: 2015-05-26
- 发明人: Toru Tanzawa , Tomoharu Tanaka
- 申请人: Toru Tanzawa , Tomoharu Tanaka
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Alpine Technology Law Group LLC
- 国际申请: PCT/US2012/030489 WO 20120325
- 国际公布: WO2013/147727 WO 20131003
- 主分类号: G11C16/30
- IPC分类号: G11C16/30 ; G11C5/14 ; G11C29/00
摘要:
An integrated circuit includes a circuit block to utilize a load current at a load voltage from a power input and two or more charge pump arrays. The outputs of the charge pump arrays are coupled to the power input of the circuit block. The integrated circuit includes one or more modifiable elements to disable one or more of the two or more charge pump arrays.
公开/授权文献
- US20140029346A1 CHARGE PUMP REDUNDANCY IN A MEMORY 公开/授权日:2014-01-30
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