Invention Grant
US09048266B2 Apparatus and methods for improving parallel conduction in a quantum well device
有权
用于改善量子阱器件中的并联传导的装置和方法
- Patent Title: Apparatus and methods for improving parallel conduction in a quantum well device
- Patent Title (中): 用于改善量子阱器件中的并联传导的装置和方法
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Application No.: US13956685Application Date: 2013-08-01
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Publication No.: US09048266B2Publication Date: 2015-06-02
- Inventor: Ravi Pillarisetty , Mantu Hudait , Been-Yih Jin , Benjamin Chu-Kung , Robert Chau
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Winkle, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/161 ; H01L29/36
Abstract:
Embodiments of an apparatus and methods of providing a quantum well device for improved parallel conduction are generally described herein. Other embodiments may be described and claimed.
Public/Granted literature
- US20130313520A1 APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTUM WELL DEVICE Public/Granted day:2013-11-28
Information query
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