Invention Grant
- Patent Title: Integrated circuit and manufacturing method
- Patent Title (中): 集成电路及制造方法
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Application No.: US14513352Application Date: 2014-10-14
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Publication No.: US09052267B2Publication Date: 2015-06-09
- Inventor: Youri Victorovitch Ponomarev , David Tio Castro , Roel Daamen
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP, B.V.
- Current Assignee: NXP, B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP12153390 20120131
- Main IPC: H01L21/00
- IPC: H01L21/00 ; G01N27/04 ; G01N27/12 ; G01N27/22 ; H01L51/00 ; H01L51/42 ; G01N33/00 ; H01L27/144 ; H01L31/18

Abstract:
Disclosed is an integrated circuit comprising a substrate (10) including at least one light sensor (12); an interconnect structure (20) over the substrate; at least one passivation layer (30) over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor (50) at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer (46′) in between a first electrode (42) and a second electrode (44), the gas sensitive layer further comprising a portion (46″) over the first area. A method of manufacturing such an IC is also disclosed.
Public/Granted literature
- US20150031158A1 INTEGRATED CIRCUIT AND MANUFACTURING METHOD Public/Granted day:2015-01-29
Information query
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