Invention Grant
- Patent Title: Image sensors and methods of fabricating the same
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US13785056Application Date: 2013-03-05
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Publication No.: US09054003B2Publication Date: 2015-06-09
- Inventor: Jungchak Ahn , Kyungho Lee , Heegeun Jeong , Sangjun Choi , Jongeun Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0053265 20120518
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
Provided are image sensors and methods of fabricating the same. The image sensor has a transfer gate, which may be configured to include a buried portion having a flat bottom surface and a rounded lower corner. This structure of the buried portion enables to transfer electric charges stored in the photoelectric conversion part effectively.
Public/Granted literature
- US20130307040A1 IMAGE SENSORS AND METHODS OF FABRICATING THE SAME Public/Granted day:2013-11-21
Information query
IPC分类:
