公开(公告)号：US20230261024A1

公开(公告)日：2023-08-17

申请号：US18306006

申请日：2023-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinyoung Kim ,  Euiyeol Kim ,  Hyounmin Baek ,  Jeong-Ho Lee ,  Youngwoo Chung ,  Heegeun Jeong

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14636 ,  H01L27/14603 ,  H01L27/14621

Abstract: An image sensor includes; a substrate having a first surface and an opposing second surface and including unit pixels respectively having photoelectric conversion regions, a semiconductor pattern disposed in a first trench defining the unit pixels, the semiconductor pattern including a first semiconductor layer provided on an inner surface of the first trench and a second semiconductor layer provided on the first semiconductor layer, and a first contact provided on the second surface and connected to the semiconductor pattern. A height of the first semiconductor layer from a bottom surface of the first trench is less than a height of the second semiconductor layer from the bottom surface of the first trench.

公开(公告)号：US20220165766A1

公开(公告)日：2022-05-26

申请号：US17453013

申请日：2021-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoemin Jeong ,  Seungjoo Nah ,  Heegeun Jeong ,  Wonmo Chun

IPC: H01L27/146

Abstract: An image sensor includes: a substrate including a plurality of first and second pixels; a light blocking pattern providing a plurality of first spaces respectively disposed on the first pixels and at least one second space disposed on the plurality of second pixels; a plurality of color filters respectively disposed in the plurality of first spaces; and a microlens layer including a plurality of first microlenses respectively disposed on the plurality of color filters, at least one filling portion disposed in the at least one second space, and at least one second microlens disposed on the at least one filling portion, wherein the microlenses are disposed at the same height as each other, and wherein the at least one filling portion and the at least one second microlens comprise an integrated structure without an interface between the at least one filling portion and the at least one second microlens.

公开(公告)号：US12087785B2

公开(公告)日：2024-09-10

申请号：US17453013

申请日：2021-11-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoemin Jeong ,  Seungjoo Nah ,  Heegeun Jeong ,  Wonmo Chun

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes: a substrate including a plurality of first and second pixels; a light blocking pattern providing a plurality of first spaces respectively disposed on the first pixels and at least one second space disposed on the plurality of second pixels; a plurality of color filters respectively disposed in the plurality of first spaces; and a microlens layer including a plurality of first microlenses respectively disposed on the plurality of color filters, at least one filling portion disposed in the at least one second space, and at least one second microlens disposed on the at least one filling portion, wherein the microlenses are disposed at the same height as each other, and wherein the at least one filling portion and the at least one second microlens comprise an integrated structure without an interface between the at least one filling portion and the at least one second microlens.

公开(公告)号：US20170040358A1

公开(公告)日：2017-02-09

申请号：US15224095

申请日：2016-07-29

Applicant: Samsung Electronics Co. , Ltd.

Inventor： Sun-Hyun KIM ,  Kyeongjae Byeon ,  Chungho Song ,  Heegeun Jeong

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14689

Abstract: A semiconductor device includes a pad disposed on a semiconductor layer, an insulating layer disposed between the semiconductor layer and the pad, a through-via penetrating the semiconductor layer and the insulating layer so as to be connected to the pad, and an isolation layer penetrating the semiconductor layer and surrounding the pad when viewed from a plan view.

Abstract translation: 半导体器件包括设置在半导体层上的焊盘，设置在半导体层和焊盘之间的绝缘层，穿透半导体层和绝缘层的贯通孔，以连接到焊盘，并且隔离层穿透 半导体层并且从俯视图观察时围绕该衬垫。

公开(公告)号：US12302655B2

公开(公告)日：2025-05-13

申请号：US17657010

申请日：2022-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongmin Han ,  Wonhyeok Kim ,  Seongjoo Nah ,  Heegeun Jeong

IPC: H01L27/146 ,  H10F39/00 ,  H10F39/18

Abstract: An image sensor includes a dual vertical gate. The dual vertical gate includes two vertical extension portions that are spaced apart from each other in a first direction and vertically extend in a second direction perpendicular to the first direction into a substrate, and a connection portion that connects the two vertical extension portions to each other. An element isolation layer is disposed adjacent to a side surface of the vertical extension portion in the first direction. The two vertical extension portions are separated by a separation area that extends in the second direction, and a top surface of the separation area is lower than a top surface of the element isolation layer.

公开(公告)号：US20240170523A1

公开(公告)日：2024-05-23

申请号：US18509493

申请日：2023-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonhyeok Kim ,  Seungjoo Nah ,  Ingyu Hyun ,  Heegeun Jeong

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14683

Abstract: An image sensor including a substrate including a first surface and a second surface, and including a plurality of photoelectric conversion elements therein. A plurality of pixels may be provided in the substrate, a plurality of pixel separation structures may be configured to separate the plurality of pixels, and a plurality of contacts may be respectively connected to the plurality of pixel separation structures. A first contact among the plurality of contacts may be configured to apply a current to a first portion of the plurality of pixel separation structures, and a second contact among the plurality of contacts may be configured to detect a current from a second portion of the plurality of pixel separation structures.

公开(公告)号：US10707253B2

公开(公告)日：2020-07-07

申请号：US15837497

申请日：2017-12-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonchul Choi ,  Min Jang ,  Yitae Kim ,  Heegeun Jeong

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor includes a semiconductor substrate having first and second surfaces facing each other and a first device isolation layer provided in the semiconductor substrate. The first device isolation layer defines pixel regions of the semiconductor substrate and includes first and second portions crossing each other. The first and second portions are provided to surround one of the pixel regions, and the first portion is provided to extend from the first surface of the semiconductor substrate toward the second surface and to have a structure inclined relative to the first surface.

公开(公告)号：US09054003B2

公开(公告)日：2015-06-09

申请号：US13785056

申请日：2013-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungchak Ahn ,  Kyungho Lee ,  Heegeun Jeong ,  Sangjun Choi ,  Jongeun Park

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14638 ,  H01L27/14641 ,  H01L27/14643

Abstract: Provided are image sensors and methods of fabricating the same. The image sensor has a transfer gate, which may be configured to include a buried portion having a flat bottom surface and a rounded lower corner. This structure of the buried portion enables to transfer electric charges stored in the photoelectric conversion part effectively.

Abstract translation: 提供图像传感器及其制造方法。 图像传感器具有传输门，其可以被配置为包括具有平坦底表面和圆形下角的掩埋部分。 埋入部分的这种结构能够有效地转移存储在光电转换部分中的电荷。

公开(公告)号：US12272704B2

公开(公告)日：2025-04-08

申请号：US17744045

申请日：2022-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeongjae Byeon ,  Jinyoung Kim ,  Seungjoo Nah ,  Heegeun Jeong

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first region and a second region surrounding the first region, a light sensing element in the substrate, a planarization layer on the light sensing element, a color filter array layer including color filters on the planarization layer on the first region of the substrate, a light blocking metal pattern on the planarization layer on the second region of the substrate, a dummy color filter layer on the light blocking metal pattern on a portion of the second region adjacent to the first region of the substrate, and microlens on the color filter array layer. Active pixels are in the first region, and optical black (OB) pixels are in the second region.

公开(公告)号：US20240347559A1

公开(公告)日：2024-10-17

申请号：US18754448

申请日：2024-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoemin Jeong ,  Seungjoo Nah ,  Heegeun Jeong ,  Wonmo Chun

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14685

Abstract: An image sensor includes first through fourth pixels. The first pixel includes a first color filter, a first photoelectric conversion device (PD), and a first microlens. The second pixel includes a second PD and a first filling portion. The third pixel includes a third PD and a second filling portion. The fourth pixel includes a fourth PD, a second microlens, and a second color filter different from the first color filter. The second pixel is adjacent to the first pixel. The third pixel is adjacent to the second pixel. The second and third pixels do not comprise any one of a red, blue, and green color filter. Each of the first and second filling portions is configured to transmit light of wavelengths corresponding to blue, red, and green to the second and third PDs, respectively. The first color filter is configured to transmit light of the wavelength corresponding to blue.