Invention Grant
- Patent Title: Method of fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14060806Application Date: 2013-10-23
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Publication No.: US09054037B2Publication Date: 2015-06-09
- Inventor: Dong-Chan Kim , Tai-Su Park , Ju-Eun Kim , Ki-Hong Nam
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0128223 20121113
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/28 ; H01L29/51 ; H01L21/02 ; H01L27/108
Abstract:
A method of fabricating a semiconductor device includes forming a trench in a substrate, forming a pre-gate insulating film along side surfaces and a bottom surface of the trench, and oxidizing the pre-gate insulating film through a densification process.
Public/Granted literature
- US20140134812A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2014-05-15
Information query
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