Invention Grant
- Patent Title: Noise attenuation wall
- Patent Title (中): 噪音衰减墙
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Application No.: US13626829Application Date: 2012-09-25
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Publication No.: US09054096B2Publication Date: 2015-06-09
- Inventor: Christophe Erdmann , Edward Cullen , Donnacha Lowney
- Applicant: Xilinx, Inc.
- Applicant Address: US CA San Jose
- Assignee: XILINX, INC.
- Current Assignee: XILINX, INC.
- Current Assignee Address: US CA San Jose
- Agent W. Eric Webostad; Robert M. Brush
- Main IPC: H01L23/552
- IPC: H01L23/552 ; H01L23/498 ; H01L23/66 ; H01L23/538 ; H01L23/00 ; H01L25/065

Abstract:
An embodiment of an apparatus is disclosed. For this embodiment of the apparatus, an interposer has first vias. First interconnects and second interconnects respectively are coupled on opposite surfaces of the interposer. A first portion of the first interconnects and a second portion of the first interconnects are spaced apart from one another defining an isolation region between them. A substrate has second vias. Third interconnects and the second interconnects are respectively coupled on opposite surfaces of the package substrate. A first portion of the first vias and a first portion of the second vias are both in the isolation region and are coupled to one another with a first portion of the second interconnects.
Public/Granted literature
- US20140084477A1 NOISE ATTENUATION WALL Public/Granted day:2014-03-27
Information query
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