Invention Grant
- Patent Title: Hybrid vertical cavity laser for photonic integrated circuit
- Patent Title (中): 用于光子集成电路的混合垂直腔激光器
-
Application No.: US13974596Application Date: 2013-08-23
-
Publication No.: US09054489B2Publication Date: 2015-06-09
- Inventor: Taek Kim , Igor Shcherbatko
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2012-0112655 20121010
- Main IPC: H01S3/08
- IPC: H01S3/08 ; H01S5/10 ; H01S5/12 ; H01S5/02 ; H01S5/183 ; H01S5/20 ; H01S5/026

Abstract:
According to example embodiments, a hybrid vertical cavity laser for a photonic integrated circuit (PIC) includes: a grating mirror between first and second low refractive index layers, an optical waveguide optically coupled to one side of the grating mirror, a III-V semiconductor layer including an active layer on an upper one of the first and second low refractive index layers, and a top mirror on the III-V semiconductor layer. The grating mirror includes a plurality of bar-shaped low refractive index material portions arranged parallel to each other. The low refractive index material portions include a plurality of first portions having a first width and a plurality of second portions having second width in a width direction. The first and second widths are different.
Public/Granted literature
- US20140098833A1 HYBRID VERTICAL CAVITY LASER FOR PHOTONIC INTEGRATED CIRCUIT Public/Granted day:2014-04-10
Information query