Abstract:
According to example embodiments, a hybrid vertical cavity laser for a photonic integrated circuit (PIC) includes: a grating mirror between first and second low refractive index layers, an optical waveguide optically coupled to one side of the grating mirror, a III-V semiconductor layer including an active layer on an upper one of the first and second low refractive index layers, and a top mirror on the III-V semiconductor layer. The grating mirror includes a plurality of bar-shaped low refractive index material portions arranged parallel to each other. The low refractive index material portions include a plurality of first portions having a first width and a plurality of second portions having second width in a width direction. The first and second widths are different.
Abstract:
A photodetector includes a waveguide on a substrate, and a photodetection portion connected to the waveguide. The photodetection portion includes a first semiconductor layer, graphene on the semiconductor layer, and a second semiconductor layer on the graphene. A first electrode and a second electrode separated from the first ridge portion and electrically connected to the graphene.
Abstract:
A laser device includes a silicon substrate, a buffer layer on the silicon substrate, a laser cavity on the buffer layer including a first active region based on group III-V semiconductor quantum dots, and a semiconductor optical amplifier that is integrated with the laser cavity on the buffer layer, includes a second active region based on group III-V semiconductor quantum dots, and amplifies light emitted from the laser cavity.
Abstract:
A hybrid vertical cavity laser includes an optical circuit substrate including a grating having refractive index units having a lower refractive index and a higher refractive index with respect to each other that are alternately arranged in a first direction, and a waveguide guiding light in the first direction, a mesa structure on the optical circuit substrate, the mesa structure including a first-type semiconductor layer including an exposed portion, an active layer, a second-type semiconductor layer, and an upper reflective layer sequentially stacked in a second direction perpendicular to the first direction, a first electrode on the exposed portion, and a second electrode on the upper reflective layer. An overlapped length between the waveguide and a mesa aperture forming an opening through which light produced from the active layer enters the grating is D, a pitch of the grating is p, and 0