Invention Grant
US09059038B2 System for in-situ film stack measurement during etching and etch control method
有权
用于在蚀刻期间进行原位膜堆测量的系统和蚀刻控制方法
- Patent Title: System for in-situ film stack measurement during etching and etch control method
- Patent Title (中): 用于在蚀刻期间进行原位膜堆测量的系统和蚀刻控制方法
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Application No.: US13945759Application Date: 2013-07-18
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Publication No.: US09059038B2Publication Date: 2015-06-16
- Inventor: Shifang Li , Junwei Bao , Hanyou Chu , Wen Jin , Ching-Ling Meng , Weiwen Xu , Ping Wang , Holger Tuitje , Mihail Mihaylov , Xinkang Tian
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01J37/32
Abstract:
Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.
Public/Granted literature
- US20140024143A1 SYSTEM FOR IN-SITU FILM STACK MEASUREMENT DURING ETCHING AND ETCH CONTROL METHOD Public/Granted day:2014-01-23
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