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1.发明授权System for in-situ film stack measurement during etching and etch control method 有权用于在蚀刻期间进行原位膜堆测量的系统和蚀刻控制方法公开(公告)号：US09059038B2
公开(公告)日：2015-06-16
申请号：US13945759
申请日：2013-07-18
Applicant: TOKYO ELECTRON LIMITED
Inventor： Shifang Li , Junwei Bao , Hanyou Chu , Wen Jin , Ching-Ling Meng , Weiwen Xu , Ping Wang , Holger Tuitje , Mihail Mihaylov , Xinkang Tian
CPC classification number: H01L22/12 , H01J37/32972 , H01L22/26
Abstract: Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.
Abstract translation: 公开了一种在半导体制造中形成阶梯式结构期间控制等离子体蚀刻工艺的原位光学监视器（ISOM）系统及其相关方法。 可以可选地，原位光学监视器（ISOM）被配置为耦合到表面波等离子体源（SWP），例如径向线槽天线（RLSA）等离子体源。 描述了一种方法，以便在形成阶梯式结构的等离子体蚀刻过程的控制期间，使步骤的侧向凹陷和光致抗蚀剂层的蚀刻厚度与原位光学监视器（ISOM）一起使用。
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2.发明申请SYSTEM FOR IN-SITU FILM STACK MEASUREMENT DURING ETCHING AND ETCH CONTROL METHOD 有权在蚀刻和蚀刻控制方法期间的现场薄膜堆叠测量系统公开(公告)号：US20140024143A1
公开(公告)日：2014-01-23
申请号：US13945759
申请日：2013-07-18
Applicant: Tokyo Electron Limited
Inventor： Shifang LI , Junwei Bao , Hanyou Chu , Wen Jin , Ching-Ling Meng , Weiwen Xu , Ping Wang , Holger Tuitje , Mihail Mihaylov , Xinkang Tian
IPC: H01L21/66
CPC classification number: H01L22/12 , H01J37/32972 , H01L22/26
Abstract: Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.
Abstract translation: 公开了一种在半导体制造中形成阶梯式结构期间控制等离子体蚀刻工艺的原位光学监视器（ISOM）系统及其相关方法。 可以可选地，原位光学监视器（ISOM）被配置为耦合到表面波等离子体源（SWP），例如径向线槽天线（RLSA）等离子体源。 描述了一种方法，以便在形成阶梯式结构的等离子体蚀刻过程的控制期间，使步骤的侧向凹陷和光致抗蚀剂层的蚀刻厚度与原位光学监视器（ISOM）一起使用。
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