Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14082659Application Date: 2013-11-18
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Publication No.: US09059045B2Publication Date: 2015-06-16
- Inventor: Shunpei Yamazaki , Hideaki Kuwabara , Yasuyuki Arai
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2000-064227 20000308
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L27/12 ; G02F1/1345 ; G02F1/1362 ; G02F1/1368 ; H01L21/67 ; H01L29/66

Abstract:
A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode 127, the source region 123 and the drain region 124 by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized, FIG. 2.
Public/Granted literature
- US20140218652A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-08-07
Information query
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