Invention Grant
- Patent Title: Etch with pulsed bias
- Patent Title (中): 蚀刻脉冲偏压
-
Application No.: US13252813Application Date: 2011-10-04
-
Publication No.: US09059116B2Publication Date: 2015-06-16
- Inventor: Amit Jain , Qian Fu , Wonchul Lee
- Applicant: Amit Jain , Qian Fu , Wonchul Lee
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Beyer Law Group LLP
- Main IPC: B44C1/22
- IPC: B44C1/22 ; H01L21/311 ; H01L21/302 ; H01L21/3213
Abstract:
A method for etching features into an etch layer through a patterned mask in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a main etch plasma. A bias greater than 600 volts is provided. The bias is pulsed at a frequency between 1 Hz and 20 kHz with a duty cycle less than 45%.
Public/Granted literature
- US20130084708A1 ETCH WITH PULSED BIAS Public/Granted day:2013-04-04
Information query
