发明授权
- 专利标题： Semiconductor device having vertical gates and fabrication thereof
- 专利标题（中）： 具有垂直栅极的半导体器件及其制造
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申请号： US13555640申请日： 2012-07-23
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公开(公告)号： US09059142B2公开(公告)日： 2015-06-16
- 发明人: Wen-Ping Liang , Chiang-Hung Lin , Kuo-Hui Su
- 申请人： Wen-Ping Liang , Chiang-Hung Lin , Kuo-Hui Su
- 申请人地址： TW Taoyuan
- 专利权人： Nanya Technology Corporation
- 当前专利权人： Nanya Technology Corporation
- 当前专利权人地址： TW Taoyuan
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/336 ; H01L29/423 ; H01L29/49 ; H01L29/78 ; H01L29/51
摘要：
A method for forming a semiconductor device with a vertical gate is disclosed, including providing a substrate, forming a recess in the substrate, forming a gate dielectric layer on a sidewall and a bottom of the recess, forming an adhesion layer in the recess and on the gate dielectric layer, wherein the adhesion layer is a metal silicide nitride layer, and forming a gate layer in the recess and on the adhesion layer.
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