发明授权
- 专利标题： Deposition of high vapor pressure materials
- 专利标题（中）： 沉积高蒸气压材料
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申请号： US12730800申请日： 2010-03-24
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公开(公告)号： US09062369B2公开(公告)日： 2015-06-23
- 发明人: Scott Wayne Priddy , Chad Michael Conroy
- 申请人： Scott Wayne Priddy , Chad Michael Conroy
- 申请人地址： US NY Plainview
- 专利权人： Veeco Instruments, Inc.
- 当前专利权人： Veeco Instruments, Inc.
- 当前专利权人地址： US NY Plainview
- 代理机构： Kagan Binder, PLLC
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23C14/24 ; C23C14/06
摘要：
The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.
公开/授权文献
- US20100248416A1 DEPOSITION OF HIGH VAPOR PRESSURE MATERIALS 公开/授权日：2010-09-30
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