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公开(公告)号：US09062369B2
公开(公告)日：2015-06-23
申请号：US12730800
申请日：2010-03-24
CPC分类号： C23C14/243 , C23C14/0623 , Y02E10/52
摘要： The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.
摘要翻译： 本发明提供可以有效和可控地提供用于沉积薄膜材料的蒸发材料的沉积源，系统和相关方法。 本文所述的沉积源，系统和相关方法可以用于沉积任何所需的材料，并且特别适用于在制造基于铜铟镓硒的光电器件的制造中沉积高蒸气压材料如硒。
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公开(公告)号：US20100154710A1
公开(公告)日：2010-06-24
申请号：US12639508
申请日：2009-12-16
IPC分类号： C23C14/00
CPC分类号： C23C14/243 , C23C14/12 , C23C14/26
摘要： Vapor depositions sources, systems, and related deposition methods. Vapor deposition sources for use with materials that evaporate or sublime in a difficult to control or otherwise unstable manner are provided. The present invention is particularly applicable to deposition of organic material such as those for forming one or more layer in organic light emitting devices.
摘要翻译： 蒸气沉积源，系统和相关沉积方法。 提供了与难以控制或以其他不稳定的方式蒸发或升华的材料一起使用的蒸气沉积源。 本发明特别适用于有机材料的沉积，例如在有机发光器件中形成一个或多个层的有机材料。
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公开(公告)号：US20080173241A1
公开(公告)日：2008-07-24
申请号：US12002526
申请日：2007-12-17
IPC分类号： C23C16/455 , B01D7/00
CPC分类号： C23C14/12 , C23C14/243 , C23C14/246 , C23C14/542 , H01L51/001 , H01L51/56
摘要： Vapor depositions sources, systems, and related deposition methods. Vapor deposition sources for use with materials that evaporate or sublime in a difficult to control or otherwise unstable manner are provided. The present invention is particularly applicable to deposition of organic material such as those for forming one or more layer in organic light emitting devices.
摘要翻译： 蒸气沉积源，系统和相关沉积方法。 提供了与难以控制或以其他不稳定的方式蒸发或升华的材料一起使用的蒸气沉积源。 本发明特别适用于有机材料的沉积，例如在有机发光器件中形成一个或多个层的有机材料。
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公开(公告)号：US20100248416A1
公开(公告)日：2010-09-30
申请号：US12730800
申请日：2010-03-24
IPC分类号： H01L31/18
CPC分类号： C23C14/243 , C23C14/0623 , Y02E10/52
摘要： The present invention provides deposition sources, systems, and related methods that can efficiently and controllably provide vaporized material for deposition of thin-film materials. The deposition sources, systems and related methods described herein can be used to deposit any desired material and are particularly useful for depositing high vapor pressure materials such as selenium in the manufacture of copper indium gallium diselenide based photovoltaic devices.
摘要翻译： 本发明提供可以有效和可控地提供用于沉积薄膜材料的蒸发材料的沉积源，系统和相关方法。 本文所述的沉积源，系统和相关方法可以用于沉积任何所需的材料，并且特别适用于在制造基于铜铟镓硒的光电器件的制造中沉积高蒸气压材料如硒。
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