发明授权
US09062375B2 Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same 有权
横流原子层沉积装置和使用其的原子层沉积方法

Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same
摘要:
A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.
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