发明授权
- 专利标题: Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same
- 专利标题(中): 横流原子层沉积装置和使用其的原子层沉积方法
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申请号: US13587061申请日: 2012-08-16
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公开(公告)号: US09062375B2公开(公告)日: 2015-06-23
- 发明人: Woo Chan Kim , Jeong Ho Lee , Sang Jin Jeong , Hyun Soo Jang
- 申请人: Woo Chan Kim , Jeong Ho Lee , Sang Jin Jeong , Hyun Soo Jang
- 申请人地址: KR Cheonan-Si
- 专利权人: ASM GENITECH KOREA LTD.
- 当前专利权人: ASM GENITECH KOREA LTD.
- 当前专利权人地址: KR Cheonan-Si
- 代理机构: Lexyoume IP Meister, PLLC
- 优先权: KR10-2011-0081692 20110817; KR10-2012-0089014 20120814
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23C16/455
摘要:
A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.
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