公开(公告)号：US09879342B2

公开(公告)日：2018-01-30

申请号：US14696551

申请日：2015-04-27

Applicant: ASM GENITECH KOREA LTD.

Inventor： Woo Chan Kim ,  Jeong Ho Lee ,  Sang-Jin Jeong ,  Hyun Soo Jang

IPC: C23C16/455

CPC classification number: C23C16/45527 ,  C23C16/45504 ,  C23C16/45548 ,  C23C16/4558 ,  C23C16/45591

Abstract: A lateral flow atomic layer deposition (ALD) apparatus has two gas inflow channels and two gas outflow channels that are connected to two gas outlets that are symmetrically formed based on a substrate in which a thin film is deposited, thereby differently guiding a flow direction of a gas flowing on the substrate. Therefore, uniformity of a deposited film is improved, compared with the conventional lateral flow ALD apparatus in which a supplied source gas and reaction gas constantly flow in only one direction on the substrate.

公开(公告)号：US20130052348A1

公开(公告)日：2013-02-28

申请号：US13598998

申请日：2012-08-30

Applicant: Seung Woo Choi ,  Gwang Lae Park ,  Chun Soo Lee ,  Jeong Ho Lee ,  Young Seok Choi

Inventor： Seung Woo Choi ,  Gwang Lae Park ,  Chun Soo Lee ,  Jeong Ho Lee ,  Young Seok Choi

IPC: C23C16/455 ,  B23P11/00

CPC classification number: C23C16/45591 ,  C23C16/45504 ,  C23C16/45527 ,  H01L21/68742 ,  H01L21/68792

Abstract: A reactor configured to subject a substrate to alternately repeated surface reactions of vapor-phase reactants is disclosed. The reactor may include a reaction chamber that defines a reaction space and a gas flow control guide structure; and a substrate holder. The gas flow control guide includes one or more channels. Each of the channels widens as the channel extends from the inlet to the reaction space. At least one of the channels is configured to generate a non-uniform laminar flow at a first portion of the periphery of the reaction space such that the laminar flow includes a plurality of flow paths that provide different amounts of a fluid. The reaction chamber may include a reactor base and a reactor cover detachable from each other; and a driver configured to independently adjust at least three portions of the reactor base to provide a substantially perfect seal to the reactor space.

Abstract translation: 公开了一种被配置成使基板交替重复表面反应的反应器的反应器。 反应器可以包括限定反应空间和气体流量控制引导结构的反应室; 和基板支架。 气体流量控制引导件包括一个或多个通道。 当通道从入口延伸到反应空间时，每个通道变宽。 至少一个通道构造成在反应空间的周边的第一部分处产生不均匀的层流，使得层流包括提供不同量的流体的多个流动路径。 反应室可以包括可以彼此分离的反应器基座和反应器盖; 以及被配置为独立地调整反应器基座的至少三个部分以向反应器空间提供基本上完美的密封的驱动器。

公开(公告)号：US08273408B2

公开(公告)日：2012-09-25

申请号：US12250827

申请日：2008-10-14

Applicant: Jong Su Kim ,  Hyung Sang Park

Inventor： Jong Su Kim ,  Hyung Sang Park

IPC: C23C28/00

CPC classification number: C23C16/40 ,  C23C16/45527 ,  H01L21/28562 ,  H01L28/65

Abstract: Cyclical methods of depositing a ruthenium layer on a substrate are provided. In one process, initial or incubation cycles include supplying alternately and/or simultaneously a ruthenium precursor and an oxygen-source gas to deposit ruthenium oxide on the substrate. The ruthenium oxide deposited on the substrate is reduced to ruthenium, thereby forming a ruthenium layer. The oxygen-source gas may be oxygen gas (O2). The ruthenium oxide may be reduced by supplying a reducing agent, such as ammonia (NH3) gas. The methods provide a ruthenium layer having good adherence to an underlying high dielectric layer while providing good step coverage over structures on the substrate. After nucleation, subsequent deposition cycles can be altered to optimize speed and/or conformality rather than adherence.

Abstract translation: 提供了在基片上沉积钌层的周期性方法。 在一个过程中，初始或孵育循环包括交替地和/或同时提供钌前体和氧源气体以在氧化钌上沉积氧化钌。 沉积在基板上的氧化钌还原成钌，从而形成钌层。 氧源气体可以是氧气（O 2）。 可以通过供给诸如氨（NH 3）气体的还原剂来还原氧化钌。 该方法提供了具有对下面的高介电层的良好粘附性的钌层，同时在衬底上的结构上提供了良好的阶梯覆盖。 成核后，可以改变随后的沉积循环以优化速度和/或保形性而不是粘附。

公开(公告)号：US08347813B2

公开(公告)日：2013-01-08

申请号：US12332234

申请日：2008-12-10

Applicant: Ki Jong Kim ,  Dae Youn Kim

Inventor： Ki Jong Kim ,  Dae Youn Kim

IPC: B05C11/00 ,  B05C13/00 ,  C23C14/00

CPC classification number: C23C16/52 ,  H01L21/67259

Abstract: A thin film deposition apparatus including a substrate mounting error detector, a chamber and a substrate support positioned in the chamber. The substrate support is configured to support a substrate. The substrate mounting error detector includes: a light source configured to provide a light beam to the substrate, such that the substrate reflects the light beam; a collimator configured to selectively pass at least a portion of the light beam reflected by the substrate; and an optical sensor configured to detect the at least a portion of the reflected light beam passed by the collimator. The detector is positioned and oriented to detect substrate position on a lowered support prior to raising the support into contact with an upper cover of a clamshell reactor arrangement. This configuration allows a thin film deposition process only if the substrate is correctly mounted on the substrate support. Thus, abnormal deposition due to a substrate mounting error is prevented in advance.

Abstract translation: 一种薄膜沉积设备，包括基板安装误差检测器，腔室和位于腔室中的基板支撑件。 衬底支撑件构造成支撑衬底。 基板安装误差检测器包括：被配置为向基板提供光束的光源，使得基板反射光束; 准直器，被配置为选择性地通过由所述基板反射的光束的至少一部分; 以及光学传感器，被配置为检测由准直仪通过的反射光束的至少一部分。 检测器被定位和定向以在将支撑件升高成与蛤壳式反应器装置的上盖接触之前检测降低的支撑件上的基板位置。 这种配置仅在基板正确地安装在基板支撑件上时才允许薄膜沉积工艺。 因此，预先防止由于基板安装误差引起的异常沉积。

公开(公告)号：US20110308460A1

公开(公告)日：2011-12-22

申请号：US13171899

申请日：2011-06-29

Applicant: Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

Inventor： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC: C23C16/455 ,  C23C16/509 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/045 ,  C23C16/45508

Abstract: The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

Abstract translation: 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：USD614152S1

公开(公告)日：2010-04-20

申请号：US29331021

申请日：2009-01-16

Applicant: Jeong Ho Lee ,  Sang Jin Jeong ,  Young Seok Choi

Designer： Jeong Ho Lee ,  Sang Jin Jeong ,  Young Seok Choi

公开(公告)号：US20090155606A1

公开(公告)日：2009-06-18

申请号：US12325862

申请日：2008-12-01

Applicant: Tae Ho Yoon ,  Hyung Sang Park ,  Hak Yong Kwon ,  Young Jae Kim

Inventor： Tae Ho Yoon ,  Hyung Sang Park ,  Hak Yong Kwon ,  Young Jae Kim

IPC: B32B9/00

CPC classification number: C23C16/345 ,  C23C16/45542

Abstract: Cyclical methods of depositing a silicon nitride film on a substrate are provided. In one embodiment, a method includes supplying a chlorosilane to a reactor in which a substrate is processed; supplying a purge gas to the reactor; and providing ammonia plasma to the reactor. The method allows a silicon nitride film to be formed at a low process temperature and a high deposition rate. The resulting silicon nitride film has a relatively few impurities and a relatively high quality. In addition, a silicon nitride film having good step coverage over features having high aspect ratios and a thin and uniform thickness can be formed.

Abstract translation: 提供了在衬底上沉积氮化硅膜的循环方法。 在一个实施方案中，一种方法包括将氯硅烷供应到其中处理衬底的反应器中; 向反应器供应净化气体; 并向反应器提供氨等离子体。 该方法允许在低工艺温度和高沉积速率下形成氮化硅膜。 所得到的氮化硅膜具有相对较少的杂质和较高的质量。 此外，可以形成具有高纵横比和薄且均匀厚度的特征的具有良好阶梯覆盖率的氮化硅膜。

公开(公告)号：US09963783B2

公开(公告)日：2018-05-08

申请号：US15157692

申请日：2016-05-18

Applicant: ASM Genitech Korea Ltd.

Inventor： Ki Jong Kim ,  Hyun Kyu Cho ,  Jin Su Lee ,  Se Yong Kim

IPC: H01L21/67 ,  C23C16/40 ,  H01J37/32 ,  C23C16/455 ,  C23C16/509

CPC classification number: C23C16/45542 ,  C23C16/45551 ,  C23C16/5096 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/32568 ,  H01J37/32733 ,  H01J2237/332

Abstract: A deposition apparatus according to an exemplary embodiment of the present invention includes a plurality of reaction spaces, a plurality of plasma electrodes respectively disposed in the reaction spaces, a first plasma processor connected to at least two plasma electrodes, and a first plasma power source connected to the first plasma processor. The first plasma processor may include a plasma distributor or a plasma splitter.

公开(公告)号：US08273178B2

公开(公告)日：2012-09-25

申请号：US12393377

申请日：2009-02-26

Applicant: Se Yong Kim ,  Woo Chan Kim ,  Dong Rak Jung

Inventor： Se Yong Kim ,  Woo Chan Kim ,  Dong Rak Jung

IPC: C23C16/44 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC classification number: C23C14/22 ,  C23C16/44

Abstract: A thin film deposition apparatus and a method of maintaining the same are disclosed. In one embodiment, a thin film deposition apparatus includes: a chamber including a removable chamber cover; one or more reactors housed in the chamber; a chamber cover lifting device connected to the chamber cover. The chamber cover lifting device is configured to move the chamber cover vertically between a lower position and an upper position. The apparatus further includes a level sensing device configured to detect whether the chamber cover is level, and a level maintaining device configured to adjust the chamber cover if the chamber cover is not level. This configuration maintains the chamber cover to be level as a condition for further vertical movement of the chamber cover.

Abstract translation: 公开了一种薄膜沉积装置及其保持方法。 在一个实施例中，薄膜沉积设备包括：包括可移除室盖的室; 容纳在室中的一个或多个反应器; 连接到室盖的室盖提升装置。 室盖提升装置构造成在下位置和上位置之间垂直移动室盖。 所述装置还包括液位感测装置，其被配置为检测所述腔室盖是否水平;以及水平维持装置，其被配置为如果所述腔室盖不是水平面则调节所述腔室盖。 这种构造保持室盖被平坦化，作为室盖的进一步垂直移动的条件。

公开(公告)号：US08252691B2

公开(公告)日：2012-08-28

申请号：US13085531

申请日：2011-04-13

Applicant: Julien Beynet ,  Hyung Sang Park ,  Naoki Inoue

Inventor： Julien Beynet ,  Hyung Sang Park ,  Naoki Inoue

IPC: H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/0228

Abstract: Semiconductor patterns are formed by performing trimming simultaneously with the process of depositing the spacer oxide. Alternatively, a first part of the trimming is performed in-situ, immediately before the spacer oxide deposition process in the same chamber in which the spacer oxide deposition is performed whereas a second part of the trimming is performed simultaneously with the process of depositing the spacer oxide. Thus, semiconductor patterns are formed reducing PR footing during PR trimming with direct plasma exposure.

Abstract translation: 通过在沉积间隔氧化物的过程中同时进行修整来形成半导体图案。 或者，在紧邻间隔氧化物沉积工艺之前的间隔氧化物沉积工艺之前，进行修整的第一部分，其中进行间隔氧化物沉积，而第二部分的修整与沉积间隔物的过程同时进行 氧化物。 因此，在通过直接等离子体曝光的PR修整期间，形成半导体图形减少PR基础。