Invention Grant
- Patent Title: Nonvolatile memory device having adjustable program pulse width
- Patent Title (中): 具有可调程序脉冲宽度的非易失性存储器件
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Application No.: US13721859Application Date: 2012-12-20
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Publication No.: US09064545B2Publication Date: 2015-06-23
- Inventor: Yongsung Cho , Kihwan Choi , Il Han Park , Kiwhan Song , Sangyong Yoon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0021059 20120229
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C7/04 ; G11C16/10
Abstract:
A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line.
Public/Granted literature
- US20130223143A1 NONVOLATILE MEMORY DEVICE HAVING ADJUSTABLE PROGRAM PULSE WIDTH Public/Granted day:2013-08-29
Information query
