A non-volatile memory device includes: a memory cell array including a plurality of memory cells each including a variable resistance element and a first current steering element; and a current steering element parameter generation circuit. The current steering element parameter generation circuit includes: a third line placed between a substrate and a second interlayer dielectric; a fourth line placed above the second interlayer dielectric; and a second current steering element which is connected between the third line and the fourth line without the variable resistance element being interposed therebetween when the variable resistance element is removed between the third line and the fourth line and has the same non-linear current steering characteristics as the first current steering element.