发明授权
- 专利标题： Extrinsic gettering on semiconductor devices
- 专利标题（中）： 半导体器件外部吸杂
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申请号： US12852643申请日： 2010-08-09
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公开(公告)号： US09064836B1公开(公告)日： 2015-06-23
- 发明人: Chin-Tien Chiu , Shrikar Bhagath , Yuang Zhang , Lu Zhong , Kaiyou Qian
- 申请人： Chin-Tien Chiu , Shrikar Bhagath , Yuang Zhang , Lu Zhong , Kaiyou Qian
- 申请人地址： CN Shanghai
- 专利权人： SanDisk Semiconductor (Shanghai) Co., Ltd.
- 当前专利权人： SanDisk Semiconductor (Shanghai) Co., Ltd.
- 当前专利权人地址： CN Shanghai
- 代理机构： Vierra Magen Marcus LLP
- 主分类号： H01L29/34
- IPC分类号： H01L29/34 ; H01L21/02
摘要：
A semiconductor wafer, die and semiconductor package formed therefrom are disclosed, where the inactive surface of the wafer has an extrinsic gettering pattern formed from a texturing process. In examples, the texturing process follows a polishing process that removes stress concentration point from the inactive surface of the wafer.
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