Invention Grant
- Patent Title: Back channel etch metal-oxide thin film transistor and process
- Patent Title (中): 背沟道蚀刻金属氧化物薄膜晶体管和工艺
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Application No.: US13913373Application Date: 2013-06-07
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Publication No.: US09065077B2Publication Date: 2015-06-23
- Inventor: Ming-Chin Hung , Shih Chang Chang , Vasudha Gupta , Young Bae Park
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple, Inc.
- Current Assignee: Apple, Inc.
- Current Assignee Address: US CA Cupertino
- Main IPC: H01L51/56
- IPC: H01L51/56 ; H01L27/32

Abstract:
A method is provided for fabricating an organic light emitting diode (OLED) display. The method includes forming a thin film transistor (TFT) substrate including a first metal layer and a second metal layer. The method also includes depositing a first passivation layer over the second metal layer, and forming a third metal layer over a channel region and a storage capacitor region. The third metal layer is configured to connect to a first portion of the second metal layer that is configured to connect to the first metal layer in a first through-hole through a gate insulator and the first passivation layer. The method further includes depositing a second passivation layer over the third metal layer, and forming an anode layer over the second passivation layer. The anode is configured to connect to a second portion of the third metal layer that is configured to connect to the second metal layer in a second through-hole of the first passivation layer and the second passivation layer.
Public/Granted literature
- US20130337596A1 Back Channel Etch Metal-Oxide Thin Film Transistor and Process Public/Granted day:2013-12-19
Information query
IPC分类: